In:
Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 832 ( 2013-11), p. 724-727
Abstract:
The different morphology of 250 nm PVDF-TrFE (70:30 mol%) thin films were observed in relation to its ferroelectricity. The annealing temperatures were varied from solvent evaporation ( T s ), Curies transition ( T c ), up to melting temperature ( T m ). It was found that the annealing process promoted the development of elongated crystallite structure also known as ferroelectric crystal, which significantly improved the ferroelectric properties of PVDF-TrFE (70:30 mol%) thin films. However, the presence of nanoscale separations on the thin film annealed over T m (AN160) suggested high possibility of defects, and hence a reduction in ferroelectric properties of thin films.
Type of Medium:
Online Resource
ISSN:
1662-8985
DOI:
10.4028/www.scientific.net/AMR.832
DOI:
10.4028/www.scientific.net/AMR.832.724
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2013
detail.hit.zdb_id:
2265002-7
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