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  • Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences  (2)
  • Ricky K Y Fu  (2)
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  • Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences  (2)
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  • 1
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 66, No. 9 ( 2017), p. 095203-
    Abstract: High-power impulse magnetron sputtering (HiPIMS), a new physical vapor deposition technique which combines the advantages of the high ionization rates of the sputtered materials and control of electromagnetism, has been widely used to deposit high-performance coatings with a large density and high adhesion. However, HiPIMS has some intrinsic disadvantages such as the low deposition rate, unstable discharge, and different ionization rates for different materials thereby hampering wider industrial adoption. We have recently designed an optimized cylindrical source based on the hollow cathode effect to circumvent the aforementioned limitations. However, during the operation of the cylindrical source, the discharge is inhomogeneous and the etching stripes are nonuniform. In order to determine the underlying mechanism and optimize the electromagnetic control, the discharge in the HiPIMS cylindrical source is simulated. The tangential magnetic field distribution on the target surface of the cylindrical sputtering source is inhomogeneous and electron runaway is serious, resulting in a relatively low plasma density. Two solutions are proposed to improve the situations. The first one is electrical improvement by installing an electron blocking plate, and the second one is magnetic improvement by adding compensating magnets. Our simulation results of the first method show that a potential well is produced by the electron blocking plate to suppress electron runaway and the plasma density is improved significantly, especially around the central cross-section of the cylindrical sputtering source. The discharge becomes homogeneous, and the etching stripes are uniform albeit not full enough. The second method of magnetic improvement significantly improves the homogeneity of the tangential magnetic field distribution on the target surface and the target utilization rate. After adding the optimized compensating magnets, the shape of the effective area (the value of the tangential magnetic field in a range of 25-50 mT) on the target surface can be controlled and made zonal. The target utilization rate increases to over 80% from 60%. In order to obtain the optimal conditions, the two techniques are combined. A larger and more homogeneous etching ring is observed by adopting both the electrical and magnetic improvements as predicted and explained by the simulation results. It can be concluded that the combination of the two improvement techniques can improve and optimize the HiPIMS cylindrical source.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2017
    Location Call Number Limitation Availability
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  • 2
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 65, No. 18 ( 2016), p. 185202-
    Abstract: High power impulse magnetron sputtering (HiPIMS) is a popular physical vapor deposition (PVD) technology because of the high ionization of the sputtering materials, large coating density, good adhesion, and other favorable properties. However, this technique suffers some disadvantages such as the small deposition rate induced by the high target potential, the metallic droplets produced by the unstable discharge, and different ionizations for different sputtering materials, thereby hampering wider acceptance by the industry. A cylindric HiPIMS source in which the discharge is restricted in the cylinder is described in this paper. By using this source, coatings can be deposited with 100% ions without metallic droplets arising from the unstable discharge, and the unionized sputtered atoms cannot be extracted by the extraction grid with negative potential. Electron oscillation and repetitive sputtering of the unionized atoms occur in the cylinder to enhance collision and ionization. Due to the enlarged discharge area by the cylinder internal surface comparing with the area of the ion outlet (end face of the cylinder), the sputtering ions converge from the inwall to the center of the cylinder target and form an enhanced flow to spray out from the source, which will improve the deposition rate. The structure and discharge characteristics of the novel HiPIMS source are investigated by simulation and experiments. Our results indicate that 8 magnets can provide the reasonable magnetic field and the highest target utilization rate. The distributions of electrons and ions in the target each consist of 8 petals in the optimized magnetic structure, and the highest plasma density happens near the target, which is above 1.31017 m-3. The discharge characteristics confirm that the cylindric sputtering source can be operated under HiPIMS conditions and the evolution of the target currents with target voltage exhibits I-V characteristics typical of HiPIMS. An obvious pre-ionization is observed on the discharge glow and discharge current curves when the extra direct current (DC) is added. The racetrack area is about 60.0% of the target surface. The ion current curves are similar to those of the target currents, but a 40 s delay and about one-tenth current value are observed compared with the target currents. The sputtering is improved by the extra DC, inducing the increased metallic ions and the opposite evolution of gas ions. The results suggest that the cylindric sputtering source can be effectively used to conduct HiPIMS and is a novel way to improve and promote the application of HiPIMS.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2016
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
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