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  • American Vacuum Society  (6)
  • Ren, Xiaomin  (6)
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  • American Vacuum Society  (6)
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  • 1
    Online Resource
    Online Resource
    Self-rolled-up InGaAs/GaAs microtubes fabricated directly on Si (100) substrates
    American Vacuum Society ; 2014
    In:  Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Vol. 32, No. 3 ( 2014-05-01)
    Details
    In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 32, No. 3 ( 2014-05-01)
    Abstract: The authors have fabricated the high-performance smooth-walled InGaAs/GaAs microtubes directly on Si (100) substrates. All the strained In0.2Ga0.8As (15 nm)/GaAs (35 nm) bilayers metamorphically grown on Si have rolled up into microtubes from the long-side of rectangular patterns. The average diameter of Si-based microtubes is ∼4.2 μm, which is slightly bigger than that of their GaAs-based counterparts. Scanning electron microscopy and atomic force microscopy measurements show that the structural properties of the Si-based InGaAs/GaAs microtubes have been quite good and nearly consistent with the GaAs-based counterparts except for very slight surface undulation.
    Type of Medium: Online Resource
    ISSN: 2166-2746 , 2166-2754
    URL: Article
    DOI: 10.1116/1.4869557
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2014
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 1475429-0
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Growth and optical properties of InP nanowires formed by Au-assisted metalorganic chemical vapor deposition: Effect of growth temperature
    American Vacuum Society ; 2011
    In:  Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Vol. 29, No. 3 ( 2011-05-01)
    Details
    In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 29, No. 3 ( 2011-05-01)
    Abstract: Vertical indium phosphide nanowires (NWs) were grown at different temperatures by metalorganic chemical vapor deposition via a gold (Au)-assisted vapor-liquid-solid mechanism. At a low growth temperature (420 °C), the lengths of the NWs were diameter independent, which indicated that the NWs were grown with significant contributions from the direct impingement of the precursors onto the alloy droplets. In this process, the droplet acts as a catalyst rather than an adatom collector. However, at a high growth temperature (480 °C), the lengths of the NWs were inversely diameter dependent. The wurtzite percentage of NWs increases with the growth temperature. Room temperature photoluminescence properties of NWs grown under different temperatures were investigated.
    Type of Medium: Online Resource
    ISSN: 2166-2746 , 2166-2754
    URL: Article
    DOI: 10.1116/1.3573985
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2011
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 1475429-0
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    Online Resource
  • 3
    Online Resource
    Online Resource
    Three-step growth of metamorphic GaAs on Si(001) by low-pressure metal organic chemical vapor deposition
    American Vacuum Society ; 2013
    In:  Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Vol. 31, No. 5 ( 2013-09-01)
    Details
    In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 31, No. 5 ( 2013-09-01)
    Abstract: In this study, metamorphic growth of GaAs on Si(001) substrate was investigated via three-step growth in a low-pressure metal organic chemical vapor deposition reactor. Three-step growth was achieved by simply inserting an intermediate temperature GaAs layer between the low temperature GaAs nucleation layer and the high temperature GaAs epilayer. Compared with conventional two-step growth, three-step growth could further reduce surface roughness and etch pit density. By combining three-step growth with thermal-cycle annealing, the authors have grown a 1.8-μm-thick GaAs epilayer with root mean square roughness of only 1.8 and 0.73 nm in 10 × 10 μm2 and 2 × 2 μm2 scanning areas, respectively. The threading dislocation density of the 1.8-μm-thick GaAs epilayer was as low as 1.1 × 107 cm−2, as calculated directly from the double crystal x-ray diffraction ω-scan full width at half maximum of the GaAs diffraction peak. The corresponding etch pit density was only 3 × 106 cm−2.
    Type of Medium: Online Resource
    ISSN: 2166-2746 , 2166-2754
    URL: Article
    DOI: 10.1116/1.4820914
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2013
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 1475429-0
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    Online Resource
  • 4
    Online Resource
    Online Resource
    Selective wet etching of InGaAs∕InGaAsP in HCl∕HF∕CrO3 solution: Application to vertical taper structures in integrated optoelectronic devices
    American Vacuum Society ; 2005
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 23, No. 4 ( 2005-07-01), p. 1650-1653
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 23, No. 4 ( 2005-07-01), p. 1650-1653
    Abstract: The etching characteristics of In0.53Ga0.47As and In0.72Ga0.28As0.6P0.4, which are lattice matched to the InP substrate, in HCl∕HF∕CrO3 solution were studied by using the dynamic etch mask technique. For the solution with HCl∕HF∕CrO3 volume ratio of x: 0.5: 1, the etching selectivity decreases from 42.4 to 1.5 for In0.53Ga0.47As∕In0.72Ga0.28As0.6P0.4 with HCl∕CrO3 volume ratio x increasing from 0 to 1.0. The selective etching was experimentally applied to the fabrication of vertical taper structures with angles ranging from 1.35° to 33.7° on the In0.72Ga0.28As0.6P0.4 epitaxial layer, and surface roughness of the etched taper was & lt;1.6nm. The etching behavior can be explained in a combined electroless and chemical etching mechanism.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.1990128
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2005
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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    Online Resource
  • 5
    Online Resource
    Online Resource
    Growth and characterization of InAs quantum dots on InP nanowires with zinc blende structure
    American Vacuum Society ; 2013
    In:  Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Vol. 31, No. 5 ( 2013-09-01)
    Details
    In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 31, No. 5 ( 2013-09-01)
    Abstract: InAs quantum dots (QDs) are grown epitaxially on the {112} side facets of InP nanowires (NWs) by metal organic chemical vapor deposition. The QDs typically have a large size and consist of some specific facets. The QDs exhibit mainly zinc blende structure with stacking faults, which is consistent with the adjacent NW. No QDs are observed on the wurtzite (WZ) part of NW, which is attributed to a lower surface energy of WZ facet. The random distribution of the QDs indicates that the In adatoms may mainly come from the vapor rather than the substrate.
    Type of Medium: Online Resource
    ISSN: 2166-2746 , 2166-2754
    URL: Article
    DOI: 10.1116/1.4818509
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2013
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 1475429-0
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  • 6
    Online Resource
    Online Resource
    Selective area growth of InP on lithography-free, nanopatterned GaAs(001) by metalorganic chemical vapor deposition
    American Vacuum Society ; 2014
    In:  Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena Vol. 32, No. 1 ( 2014-01-01)
    Details
    In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 32, No. 1 ( 2014-01-01)
    Abstract: The authors have demonstrated the feasibility and principle of utilizing silica nanospheres (SNSs) as a pattern for selective area growth of metamorphic InP on GaAs(001) substrate. SNSs with the average diameter of ∼460 nm were uniformly and closely distributed on GaAs by spin-coating. The hexagonal array of the SNSs is monolayer, which acts as a nanosphere pattern with high aspect ratio. Nearly 2-μm-thick InP epitaxial layer was deposited through the intersphere spaces using conventional two-step growth by low-pressure metalorganic chemical vapor deposition. The complete coalescence of metamorphic InP over SNSs has been achieved via the epitaxial lateral overgrowth. Cross-sectional transmission electron microscopy demonstrates that threading dislocations caused by the lattice mismatch (∼3.8%) between InP and GaAs have been blocked by SNSs. X-ray diffraction exhibits a reduction in the full width at half-maximum of InP grown on nanosphere-patterned GaAs as compared with the corresponding growth on nonpatterned GaAs. Therefore, the crystalline quality of metamorphic InP is highly improved in spite of some still existing dislocations.
    Type of Medium: Online Resource
    ISSN: 2166-2746 , 2166-2754
    URL: Article
    DOI: 10.1116/1.4855035
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2014
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 1475429-0
    Location Call Number Limitation Availability
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    Online Resource
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