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  • AIP Publishing  (15)
  • Ren, Xiaomin  (15)
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  • AIP Publishing  (15)
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  • 1
    Online Resource
    Online Resource
    Reliability enhancement of InGaAs/AlGaAs quantum-well lasers on on-axis Si (001) substrate
    AIP Publishing ; 2023
    In:  APL Materials Vol. 11, No. 9 ( 2023-09-01)
    Details
    In: APL Materials, AIP Publishing, Vol. 11, No. 9 ( 2023-09-01)
    Abstract: The enhancement of the reliability of the silicon-based III–V quantum well lasers, especially of those on an on-axis Si (001) substrate, is of great importance now a days for the development of Si-based photonic and even optoelectronic integrated circuits and is really quite challenging. As an experimental advancement, mainly by inserting a pair of InAlAs strained layers separately into the upper and lower AlGaAs cladding layers to effectively prevent the formation of the in-plane gliding misfit-dislocations within the boundary planes of the active region, the longest room-temperature and continuous-wave lifetime of the InGaAs/AlGaAs quantum well lasers on an on-axis Si (001) substrate with a cavity length of 1500 µm and a ridge width of 20 µm has been prolonged from a very initial record of ∼90 s to the present length longer than 31 min. While, the highest continuous-wave operation temperature of another one with a cavity length of 1000 µm and a ridge width of 10 µm has been shown as 103 °C with an extracted characteristic temperature of 152.7 K, further enhancement of the device reliability is still expected and would mainly depend on the level of the threading-dislocation-density reduction in the GaAs/Si virtual substrate.
    Type of Medium: Online Resource
    ISSN: 2166-532X
    URL: Article
    DOI: 10.1063/5.0162387
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 2722985-3
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  • 2
    Online Resource
    Online Resource
    Low temperature InP∕Si wafer bonding using boride treated surface
    AIP Publishing ; 2007
    In:  Applied Physics Letters Vol. 90, No. 16 ( 2007-04-16)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 90, No. 16 ( 2007-04-16)
    Abstract: An approach for InP∕Si wafer bonding based on boride-solution treatment was presented. The bonding energy is higher than the InP fracture energy by annealing at 280°C. An In0.53Ga0.47As∕InP multiple-quantum-well (MQW) structure grown on InP was transferred onto Si substrate via the bonding process. X-ray diffraction and photoluminescence reveal that crystal quality of the bonded MQW was preserved. A thin B2O3–POx–SiO2 oxide layer of about 28nm thick at the bonding interface was detected. X-ray photoelectron spectroscopy and Raman analyses indicate that the formation of oxygen bridging bonds by boride treatment is responsible for the strong fusion obtained at such low temperature.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.2724922
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2007
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 3
    Online Resource
    Online Resource
    Dependence of doubly curved regions on drying method in the fabrication of long-side rolled-up III-V microtubes
    AIP Publishing ; 2013
    In:  Applied Physics Letters Vol. 103, No. 5 ( 2013-07-29)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 103, No. 5 ( 2013-07-29)
    Abstract: Through improving fabrication process, short-side rolling phenomenon has been eliminated, and well-aligned long-side rolled-up III-V microtube arrays have been achieved. Finite element method (FEM) has been exploited to simulate the evolution of strain energy in the entire self-rolling process, showing that the difference of strain-released regions is the major factor that determines the rolling direction. Meanwhile, the doubly curved regions have been observed around the openings of air-dried microtubes but do not exist on the microtubes dried in critical point dryer, which demonstrates this structural deformation results not from the release of residual strain energy but from the surface tension.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4817518
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2013
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 4
    Online Resource
    Online Resource
    Demonstration of room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001)
    AIP Publishing ; 2022
    In:  Applied Physics Letters Vol. 121, No. 6 ( 2022-08-08)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 121, No. 6 ( 2022-08-08)
    Abstract: Room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001) has been demonstrated. A 420 nm thick GaAs epilayer completely free of antiphase domains was initially grown on the silicon substrate in a metal-organic chemical vapor deposition system and the other epilayers, including four sets of five-period strained-layer superlattices and the laser-structural layers, were successively grown in a molecular beam epitaxy system. The lasers were prepared as broad-stripe Fabry–Pérot ones with a stripe width of 21.5 μm and a cavity length of 1 mm. Typically, the threshold current and the corresponding threshold current density are 186.4 mA and 867 A/cm2, respectively. The lasing wavelength is around 980 nm, and the slope efficiency is 0.097 W/A with a single-facet output power of 22.5 mW at an injection current of 400 mA. This advancement makes the silicon-based monolithic optoelectronic integration relevant to quantum well lasers more promising with an enhanced feasibility.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0098264
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 5
    Online Resource
    Online Resource
    Morphological and temperature-dependent optical properties of InAs quantum dots on GaAs nanowires with different InAs coverage
    AIP Publishing ; 2013
    In:  Applied Physics Letters Vol. 103, No. 17 ( 2013-10-21)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 103, No. 17 ( 2013-10-21)
    Abstract: We report a study on the morphological and temperature-dependent optical properties of InAs quantum dots on GaAs nanowires with different InAs coverage. We find that the size, density, and distribution of quantum dots strongly depend on the InAs coverage. At higher coverage, the quantum dots exhibit a longer peak wavelength and broader linewidth at low temperature, suggesting a larger size and increased size fluctuations. Particularly, a great difference in the linewidth dependence on temperature for different InAs coverage is observed, corresponding to a different result of competition between electron-phonon scattering and thermal penetration of carriers between neighboring quantum dots.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4826612
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2013
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 6
    Online Resource
    Online Resource
    Low-temperature InP∕GaAs wafer bonding using sulfide-treated surface
    AIP Publishing ; 2006
    In:  Applied Physics Letters Vol. 88, No. 6 ( 2006-02-06)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 88, No. 6 ( 2006-02-06)
    Abstract: An approach for InP∕GaAs wafer bonding based on thiourea treatment was presented. The bonding energy reaches the InP fracture energy by annealing at 360°C. An In0.53Ga0.47As∕InP multiple quantum well (MQW) structure grown on InP was transferred onto GaAs substrate via the bonding process. X-ray diffraction and photoluminescence reveal that crystal quality of the bonded MQW was preserved. A thin sulfide layer with thickness of about 29nm at the bonding interface was detected. X-ray photoelectron spectroscopy analyses indicate that the formation of In–S and Ga–S bond at thiourea treated surface is responsible for the strong fusion obtained at such low temperature.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.2172024
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2006
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 7
    Online Resource
    Online Resource
    Thermal stress distribution in a laser array structure selectively grown on V-groove-patterned silicon
    AIP Publishing ; 2018
    In:  AIP Advances Vol. 8, No. 8 ( 2018-08-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 8, No. 8 ( 2018-08-01)
    Abstract: The thermal stress due to the thermal expansion mismatch could induce crystallographic defects such as buckling and cracking and degrade device performance. In this paper, the thermal stress distribution in a laser array structure selectively grown on V-groove-patterned Si substrates was investigated by two-dimension finite-element method. Surprisingly, unexpected results are observed that the top of the InGaAs active layer and the most region of the InP cap layer are in compression, which is far different from the thermal stress distribution in planar structures. Two mechanisms have been proposed and modeled to explain the difference—(i) the width of uncoalesced layers is smaller than that of the Si substrate, which causes thermal stress to change in epitaxial layers, and (ii) thermal stress in the InGaAs and InP layers is affected by the V-groove structure. The results show that whether or not the epitaxial layers are coalesced has significant effect on the thermal stress distribution. The effect of the height of the V-groove, the height and the width of the SiO2 mask on the thermal stress distribution was also studied. It is found that the height of V-groove and the height of SiO2 mask play a critical role in the stress distribution. These findings are useful for the optimal designs for the laser array and provide an important step towards the realization of photonic integration circuits on silicon.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/1.5042797
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2018
    detail.hit.zdb_id: 2583909-3
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  • 8
    Online Resource
    Online Resource
    Coalescence of GaAs on (001) Si nano-trenches based on three-stage epitaxial lateral overgrowth
    AIP Publishing ; 2015
    In:  Applied Physics Letters Vol. 106, No. 20 ( 2015-05-18)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 106, No. 20 ( 2015-05-18)
    Abstract: The coalescence of selective area grown GaAs regions has been performed on patterned 1.8 μm GaAs buffer layer on Si via metal-organic chemical vapor deposition. We propose a promising method of three-stage epitaxial lateral overgrowth (ELO) to achieve uniform coalescence and flat surface. Rough surface caused by the coalescence of different growth fronts is smoothened by this method. Low root-mean-square surface roughness of 6.29 nm has been obtained on a 410-nm-thick coalesced ELO GaAs layer. Cross-sectional transmission electron microscope study shows that the coalescence of different growth fronts will induce some new dislocations. However, the coalescence-induced dislocations tend to mutually annihilate and only a small part of them reach the GaAs surface. High optical quality of the ELO GaAs layer has been confirmed by low temperature (77 K) photoluminescence measurements. This research promises a very large scale integration platform for the monolithic integration of GaAs-based device on Si.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4921621
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2015
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 9
    Online Resource
    Online Resource
    Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1-xAs/GaAs multiple quantum wells
    AIP Publishing ; 2013
    In:  AIP Advances Vol. 3, No. 7 ( 2013-07-01)
    Details
    In: AIP Advances, AIP Publishing, Vol. 3, No. 7 ( 2013-07-01)
    Abstract: In this research, 5-period highly-strained BInGaAs/GaAs multiple quantum wells (MQWs) have been successfully grown at 480-510ºC by LP-MOCVD. Room-temperature photoluminescence (RT-PL) measurements of BInGaAs/GaAs MQWs showed the peak wavelength as long as 1.17 μm with full-width at half maximum (FWHM) of only 29.5 meV. In addition, a slight blue-shift (∼18 meV) of PL peak energy of InxGa1-xAs/GaAs MQWs was observed after boron incorporation. It has been found boron incorporation ( & lt;2%) was mainly dominated by a negative effect even though it can effectively reduce the compressive strain, i.e., it degraded the structural properties and PL efficiency of MQWs containing relatively less indium. Only at the lowest temperature growth (i.e., indium content x & gt; 40%), the positive effect of boron incorporation prevailed, i.e., boron incorporation completely suppressed the thickness undulation and lead to the improvement of PL properties.
    Type of Medium: Online Resource
    ISSN: 2158-3226
    URL: Article
    DOI: 10.1063/1.4815971
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2013
    detail.hit.zdb_id: 2583909-3
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  • 10
    Online Resource
    Online Resource
    Crack-free GaAs epitaxy on Si by using midpatterned growth: Application to Si-based wavelength-selective photodetector
    AIP Publishing ; 2008
    In:  Journal of Applied Physics Vol. 104, No. 11 ( 2008-12-01)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 104, No. 11 ( 2008-12-01)
    Abstract: A monolithically integrated wavelength-selective photodetector, which consists of an 11.86 μm thick GaAs-based Fabry–Pérot filter and a 3.84 μm thick InP-based p-i-n absorption structure (with a 0.3 μm In0.53Ga0.47As absorption layer), was grown on a Si substrate. A crack-free and high-quality epilayer with an area of 800×700 μm2 was obtained by using midpatterned growth and thermal-cycle annealing. Long dislocations running parallel to the GaAs/Si interface were formed by thermal annealing. This kind of dislocation may effectively alleviate the thermal stress across a large patterned area and be responsible for the crack-free epilayer. A photodetector with a spectral linewidth of 1.1 nm (full width at half maximum) and a quantum efficiency of 9.0% was demonstrated.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.3035843
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2008
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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