In:
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, American Vacuum Society, Vol. 4, No. 2 ( 1986-03-01), p. 525-527
Abstract:
A detailed characterization of the optical properties of GaAs/AlGaAs multiple quantum well heterostructures has been performed at superfluid helium temperatures using photoluminescence, optical transmission, and reflectance techniques yielding complementary information. We present the first report of experimentally determined absolute absorption spectra obtained from optical transmission spectra. Exciton absorption features become strongly enhanced as the wells get narrower. Theoretical calculations of the quantum energy levels correlate well with experimental observations. Reflectance spectra revealing structure of greater detail than that observed in luminescence have permitted the observation of free exciton splitting attributed to submonolayer well width fluctuations.
Type of Medium:
Online Resource
ISSN:
0734-211X
,
2327-9877
Language:
English
Publisher:
American Vacuum Society
Publication Date:
1986
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
1475429-0
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