In:
Journal of Applied Physics, AIP Publishing, Vol. 119, No. 13 ( 2016-04-07)
Abstract:
Electrical and thermoelectric (TE) properties for n-type Ag8SnSe6 and (Ag1−xNbx)8SnSe6 are investigated. Ag8SnSe6 has the thermoelectric figure of merit (ZT) close to 1.1 at 803 K due to its intrinsic ultralow thermal conductivity ∼0.3 Wm−1K−1, relatively low resistivity ∼0.01 Ω cm, and high Seebeck coefficient ∼−200 μV∕K. The ZT for pure Ag8SnSe6 drops to 0.02 at room temperature due to its large resistivity. Niobium doping increases the carrier concentration nearly 10 times and thus enhances its ZT to 0.11 at room temperature. Ag8SnSe6 is a promising n-type candidate of TE materials which needs further elaborations.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2016
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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