In:
Journal of Materials Research, Springer Science and Business Media LLC, Vol. 22, No. 5 ( 2007-05), p. 1367-1372
Abstract:
Thick and crack-free Pb(Zr,Ti)O 3 [PZT] films were fabricated on platinized silicon substrates by a multisputtering technique. The PZT films were deposited on the Si substrate by the radio frequency magnetron sputtering method using a single oxide target. As the film became thicker, its grain size increased. Therefore, the microstructure of the film was able to be controlled by repeatedly depositing thin layers. In addition, by using a seed layer with the same composition but a much smaller grain size, it was possible to further reduce the grain size of the film. When the film had a small in-plane grain size and a fibrous columnar structure, it was highly resistant to cracking, presumably because of its enhanced strength and structural stability. By exploiting these phenomena, highly dense, crack-free, and thick PZT films were successfully deposited up to a thickness of about 5 μm. The evolution of the crystallographic orientation of the film as a function of its thickness was also observed and correlated with the total strain energy of the system.
Type of Medium:
Online Resource
ISSN:
0884-2914
,
2044-5326
DOI:
10.1557/jmr.2007.0176
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2007
detail.hit.zdb_id:
54876-5
detail.hit.zdb_id:
2015297-8
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