In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 600-603 ( 2008-9), p. 1039-1042
Abstract:
Transient currents in 6H-SiC n+p diodes and those in Si PIN diodes are compared, and the
carrier dynamic response to a heavy ion collision is analyzed using Technology Computer Aided Design (TCAD). In case of 6H-SiC n+p diodes, it is found that the contribution of the
ambipolar-diffusion current to total transient current is extremely weak compared to that in Si PIN diodes, since plasma disruption is accelerated by the Auger recombination process in the former.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.600-603
DOI:
10.4028/www.scientific.net/MSF.600-603.1039
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2008
detail.hit.zdb_id:
2047372-2
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