In:
Nanoscale Research Letters, Springer Science and Business Media LLC, Vol. 10, No. 1 ( 2015-12)
Abstract:
We investigated optical properties of In-flushed InAs quantum dots (QDs) grown on a GaAs substrate by molecular beam epitaxy. By using the In-flush technique for setting the height of self-assembled InAs QDs, we have tuned the emission wavelength of InAs QDs to the ~1 μm regime, which can be utilized as a non-invasive and deeply penetrative probe for biological and medical imaging systems. The controlled emission exhibited a broadband spectrum comprising multiple peaks with an interval of approximately 30 meV. We examined the origin of the multiple peaks using spectral and time-resolved photoluminescence, and concluded that it is attributed to monolayer step fluctuations in the height of the In-flushed QDs. This feature can be advantageous for realizing a broadband light source centered at the ~1 μm regime, which is especially suitable for the non-invasive cross-sectional biological and medical imaging system known as optical coherence tomography.
Type of Medium:
Online Resource
ISSN:
1931-7573
,
1556-276X
DOI:
10.1186/s11671-015-0941-0
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2015
detail.hit.zdb_id:
2253244-4
detail.hit.zdb_id:
3149496-1
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