In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 44, No. 6L ( 2005-06-01), p. L770-
Abstract:
New ion implantation techniques were applied to optimize conditions such as annealing time, Cu dose, and Cu concentration for the green emission originating from Cu phosphor in ZnO thin films. Copper ions accelerated to 150 keV were implanted at room temperature. In the ZnO thin films implanted with Cu, the suitable annealing time was 90 min at 800°C. The optimal Cu dose was determined to be 4.5 ×10 14 ions/cm 2 . The ZnO thin films optimized for effective green emission had a Cu concentration of 9 ×10 18 ions/cm 3 .
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.44.L770
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2005
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
2006801-3
Permalink