In:
Progress in Photovoltaics: Research and Applications, Wiley, Vol. 20, No. 5 ( 2012-08), p. 534-542
Abstract:
We report on a new chemical bath deposition kinetics for the zinc sulfide oxide Zn(S,O) buffer layer as used in Cu(In,Ga)Se 2 (CIGS)‐based solar cells. The new approach allows at high rates a better control of the growth kinetics, the step coverage on the rough CIGS surface, and the [S]/([S] +[O]) ratio in the film. Layer thicknesses as needed for buffer layer applications can be grown at moderate temperatures of 60–80 °C within 5–8 min. Applying this high‐rate Zn(S,O) buffer in CIGS/Zn(S,O)/(Zn,Mg)O/ZnO:Al devices, we realized highly efficient small area solar cells, 30 × 30 cm 2 submodules, and 60 × 120 cm 2 full‐size modules. Copyright © 2012 John Wiley & Sons, Ltd.
Type of Medium:
Online Resource
ISSN:
1062-7995
,
1099-159X
Language:
English
Publisher:
Wiley
Publication Date:
2012
detail.hit.zdb_id:
2023295-0
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