In:
Applied Physics Letters, AIP Publishing, Vol. 85, No. 10 ( 2004-09-06), p. 1823-1825
Abstract:
Organic field-effect transistors were fabricated with pentacene as the active material and a ferroelectric copolymer poly(vinylidene fluoride–trifluoroethylene) as the gate insulator. As-prepared devices showed normal p-type transistor operation. The ON- and OFF-states could be written to the device by applying appropriate voltages to the gate with respect to short-circuited source and drain electrodes. The devices exhibited excellent memory retention properties.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2004
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
Permalink