In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 778-780 ( 2014-2), p. 109-112
Abstract:
C-face epitaxial growth of 4H-SiC was investigated considering the use as drift layers of high blocking voltage SiC power MOSFETs, such as 3.3 kV, using a multiple-wafer epitaxy system. As high as 50.9 μm/h was achieved as the growth rate while maintaining specular surface within quasi-150 mm-diameter wafers. Also, it has been found that the background carrier concentration could be lowered enough to control the desired n -type doping concentration of nitrogen. In addition, high-throughput has been confirmed by comparing the current data with the recent results reported.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.778-780
DOI:
10.4028/www.scientific.net/MSF.778-780.109
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2014
detail.hit.zdb_id:
2047372-2
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