In:
Journal of Physics D: Applied Physics, IOP Publishing, Vol. 54, No. 24 ( 2021-06-17), p. 243001-
Abstract:
Gallium oxide (Ga 2 O 3 ), an emerging ultra-wide-bandgap semiconductor, has the desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field of 8 MV cm −1 , decent electron mobility of 250 cm 2 V s −1 and high theoretical Baliga figures of merit (BFOMs) of around 3000. Bolstered by their capability of an economical growth technique for high-quality bulk substrate, β -Ga 2 O 3 -based materials and devices have been highly sought after in recent years for power electronics and solar-blind ultraviolet photodetectors. This article reviews the most recent advances in β -Ga 2 O 3 power device technologies. It will begins with a summary of the field and underlying semiconductor properties of Ga 2 O 3 , followed by a review of the growth methods of high-quality β -Ga 2 O 3 bulk substrates and epitaxial thin films. Then, brief perspectives on the advanced technologies and measurements in terms of ohmic contact and interface state are provided. Furthermore, some state-of-the-art β -Ga 2 O 3 photoelectronic devices, power devices and radiofrequency devices with distinguished performance are fully described and discussed. Some solutions to alleviating challenging issues, including the difficulty in p-type doping, low thermal conductivity and low mobility, are also presented and explored.
Type of Medium:
Online Resource
ISSN:
0022-3727
,
1361-6463
DOI:
10.1088/1361-6463/abe158
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2021
detail.hit.zdb_id:
209221-9
detail.hit.zdb_id:
1472948-9
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