In:
Proceedings, annual meeting, Electron Microscopy Society of America, Cambridge University Press (CUP), Vol. 54 ( 1996-08-11), p. 436-437
Abstract:
Observation of new materials such as semiconductor, polymer and compounds, with a Field Emission Scanning Microscope (FE-SEM) has been increasingly important in recent years. As the integration scale of semiconductor device as well as nanometer fabrication scale of the new materials are increasing, a high resolution FE-SEM became indispensable for research and development. Since these new materials are often non-conducting and charging, metal coating, minimum electron dose technique or rapid scanning must be used to observe the surface morphology. Furthermore, all the operational sequences have been required to be drastically simplified. We have developed a semi-in-lens fully digital FE-SEM which can obtain high resolution secondary electron images (SEI) with minimum influence of charging at the specimen. An outline of this new FE-SEM is shown in Fig. 1. The electron optical system (EOS) is based on the conventional FESEM (H. Kazumori et al, 1994) with a cold field emission gun (C-FEG), giving a guaranteed resolution of 2.5 nm at an accelerating voltage of lkV. It is possible to select ten scan speeds from 0.28s to 121s in the vertical direction with 1280 × 1024 pixels and average and integrate the SEI signals at the ambient scan speed.
Type of Medium:
Online Resource
ISSN:
0424-8201
,
2690-1315
DOI:
10.1017/S0424820100164647
Language:
English
Publisher:
Cambridge University Press (CUP)
Publication Date:
1996
SSG:
11
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