In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 26, No. 1 ( 2008-01-01), p. 386-390
Kurzfassung:
We demonstrate that He can be a powerful tool to control B diffusion both in crystalline (c-Si) and preamorphized Si (PA-Si). By means of positron annihilation spectroscopy (PAS), we showed in He-implanted c-Si the formation after annealing of large open-volume defects at the implant projected range Rp of He (voids) and of smaller vacancy-type defects toward the surface (nanovoids). In particular, these nanovoids locally suppress the amount of self-interstitials (Is) generated by B implantation, as verified by PAS, eventually reducing B diffusion and leading to a boxlike shape of the B-implanted profile. On the other hand, for B implantation in PA-Si, the authors demonstrated that if He-induced voids are formed between the end-of-range (EOR) defects and the surface, they act as a diffusion barrier for Is coming from the EOR defects. Indeed, this barrier strongly reduces diffusion of B placed in proximity of the surface.
Materialart:
Online-Ressource
ISSN:
1071-1023
,
1520-8567
Sprache:
Englisch
Verlag:
American Vacuum Society
Publikationsdatum:
2008
ZDB Id:
3117331-7
ZDB Id:
3117333-0
ZDB Id:
1475429-0
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