In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 55, No. 4S ( 2016-04-01), p. 04EJ11-
Abstract:
We have investigated the structural and electrical properties of n-type doped Si 1− x Ge x epitaxial layers ( x = 24–26%) grown by chemical vapor deposition with conventional [SiH 2 Cl 2 (DCS)/GeH 4 ] and high-order (Si 2 H 6 /Ge 2 H 6 ) precursor combinations. X-ray diffraction, atomic force microscopy, and deep-level transient spectroscopy (DLTS) measurements were performed for characterization. The crystalline properties and surface morphology of the Si 1− x Ge x layer with Si 2 H 6 /Ge 2 H 6 grown at temperatures as low as 550 °C show good structural quality similar to that with DCS/GeH 4 grown at 615 °C. On the other hand, in terms of electrical properties, the DLTS measurement reveals the existence of vacancy-related complexes in the as-grown layer with Si 2 H 6 /Ge 2 H 6 . We found that post-deposition annealing at 200 °C for the Si 1− x Ge x epitaxial layer is effective for annihilating vacancy-related defects with densities down to as low as that of conventional precursors.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.55.04EJ11
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2016
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
2006801-3
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