In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 4S ( 2000-04-01), p. 2155-
Abstract:
An elevated diffusion layer fabricated from polycrystalline
silicon (poly-Si) by solid phase diffusion was investigated in detail by secondary-ion mass spectroscopy (SIMS) analysis. We
clarified that it was necessary to control the native oxide in the poly-Si/Si substrate interface and use small-grained poly-Si to
fabricate uniform and controllable shallow junctions. The low-capacitance sidewall-elevated drain (LCSED) metal oxide
semiconductor field-effect transistor (MOSFET) fabricated by the oxygen-free load-lock low-pressure chemical vapor deposition (LPCVD)
poly-Si (L/L poly-Si) was extremely effective for marked scaling down of transistor size and realizing an ultra low reversed junction
leakage current.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.2155
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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