In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 52, No. 9R ( 2013-09-01), p. 095503-
Abstract:
We quantitatively characterized Ge films epitaxially grown on Si(001) substrates by nanocontact epitaxy. The naocontact epitaxy was composed of three stages: elastically-strain-relaxed nanodot (ND) formation, second layer growth for surface flattening, and final layer growth for high crystallinity. X-ray diffraction results showed that the lattice mismatch strain was almost-fully relaxed on the order of ∼0.05% in Ge films as thin as 100 nm, and was independent of the growth condition of films (second and final layers) above NDs. This supports the idea of a mechanism in which strain relaxation is caused by elastically-strain-relaxed ND formation. It was also verified by simple elastic theory calculation and plan-view transmission electron microscopy. Photoluminescence was observed from the thin film at ∼0.8 eV, suggesting high quality with less point defects.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.52.095503
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2013
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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