In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 44, No. 4S ( 2005-04-01), p. 2830-
Abstract:
We have fabricated top-absorption organic photodiodes (TA-OPDs) using sputtered indium zinc oxide (IZO) electrodes and compared their photodiode characteristics with conventional bottom-absorption organic photodiodes (BA-OPDs). In poly ([2-methoxy-5-(2'-ethylhexyloxy)]-1,4-phenylenevinylene) (MEH-PPV) films sandwiched between Al and IZO electrodes, the ratio of photoconductivity to dark conductivity, σ R , was approximately 10 3 for both BA- and TA-OPDs. In a TA-type Al/td-PTC/α-NPD/CuPc/IZO device, the σ R and the short-circuit photocurrent I P were 3.4×10 2 and 5.3×10 -2 mA/cm 2 , respectively. The lower value of σ R in TA-OPDs compared to BA-OPDs in this structure is ascribed to sputtering damage during IZO film preparation. We were able to prevent successfully this damage by inserting the MoO 3 hole-injecting and sputter buffer layer instead of the CuPc layer. We have also investigated the frequency characteristics of several TA-OPDs and obtained relatively good response in the TA-OPDs with a MoO 3 buffer layer. In terms of frequency characteristics, the cut-off frequency of the TA-OPDs with a MoO 3 buffer layer was as high as 300 kHz.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.44.2830
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2005
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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