In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 50, No. 12R ( 2011-12-01), p. 128001-
Abstract:
A Cu 2 ZnSnS 4 (CZTS) single crystal was grown at 900 °C, which is less than its melting point (962 °C) using a traveling heater method, which is one of the solution growth methods. No twins and no secondary phases could be distinguished from the Laue and X-ray diffraction patterns, respectively.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.50.128001
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2011
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink