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  • The Electrochemical Society  (6)
  • Mueller, Stephan  (6)
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  • The Electrochemical Society  (6)
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Language
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  • 1
    Online Resource
    Online Resource
    Characterization of Defects in SiC Substrates and Epilayers
    The Electrochemical Society ; 2014
    In:  ECS Transactions Vol. 64, No. 7 ( 2014-08-08), p. 145-152
    Details
    In: ECS Transactions, The Electrochemical Society, Vol. 64, No. 7 ( 2014-08-08), p. 145-152
    Abstract: A review is presented of recent monochromatic and white beam synchrotron topography based studies of defects in SiC substrates and epilayers. The methodologies used in applying these techniques to gain understanding of the origins and evolution of the defect structures in PVT grown boules and CVD grown epilayers will be elucidated. In particular, criteria used in distinguishing grown-in defects from deformation induced defects will be discussed. Contrast observed from the various dislocations present in the crystals will be explained, and it will be shown how contrast simulation can be used to identify the detailed characteristics of the dislocations (for example, both Burgers vector sign and magnitude). Application of the various techniques to the complete analysis of the distribution, character and origins of grown-in c-axis screw dislocations (both hollow and closed-core), deformation induced basal plane dislocations, and grown-in threading edge dislocations will be discussed.
    Type of Medium: Online Resource
    ISSN: 1938-5862 , 1938-6737
    URL: Article
    DOI: 10.1149/06407.0145ecst
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2014
    Location Call Number Limitation Availability
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Stacking Fault Formation during Homo-Epitaxy of 4H-SiC
    The Electrochemical Society ; 2014
    In:  ECS Meeting Abstracts Vol. MA2014-02, No. 40 ( 2014-08-05), p. 1973-1973
    Details
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2014-02, No. 40 ( 2014-08-05), p. 1973-1973
    Abstract: Nomarski optical microscopic observations are presented faint needle-like surface morphological features in 4H-SiC homoepitaxial layers. Close observation has revealed that these linear features often occur in pairs, composing triangles or trapezoids. Grazing incidence synchrotron white beam x-ray topographs recorded from the areas containing the linear features show V and Y shaped features which transmission topographs reveal to be ¼[0001] Frank-type stacking faults. Geometric analysis of the size and shape of these faults indicates that they are fully contained within the epilayer and appear to be nucleated at the substrate/epilayer interface. Detailed analysis shows that the positions of the V shape stacking faults match with the positions of c-axis threading dislocations with Burgers vectors of c or c+a in the substrate and thus appear to result from the deflection of these dislocations during epilayer growth. Similarly, the Y shaped defects match well with the substrate surface intersections of c-axis threading dislocations with Burgers vectors of c or c+a in the substrate which were deflected onto the basal plane during substrate growth. The observed morphology of these defect configurations allows us to propose a model for their formation mechanism. For the V shaped defects, this is based on the overgrowth of the surface spiral steps associated with the surface intersections of the threading dislocations. For the Y shaped defects this is based on overgrowth of the special configurations of steps at the surface intersections of the threading dislocations that were deflected onto the basal plane during substrate growth. Understanding the mechanism of formation of these stacking faults can enable the formulation of strategies for their elimination in order to mitigate their potentially detrimental influence on high power device performance.
    Type of Medium: Online Resource
    ISSN: 2151-2043
    URL: Article
    DOI: 10.1149/MA2014-02/40/1973
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2014
    detail.hit.zdb_id: 2438749-6
    Location Call Number Limitation Availability
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    Online Resource
  • 3
    Online Resource
    Online Resource
    Characterization of Defects in SiC Substrates and Epilayers
    The Electrochemical Society ; 2014
    In:  ECS Meeting Abstracts Vol. MA2014-02, No. 40 ( 2014-08-05), p. 1975-1975
    Details
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2014-02, No. 40 ( 2014-08-05), p. 1975-1975
    Abstract: A review will be presented of recent monochromatic and white beam synchrotron topography based studies of defects in SiC substrates, epilayers and devices. The methodologies used in applying these techniques to gain understanding of the origins and evolution of the defect structures in PVT grown boules and CVD grown epilayers will be elucidated. In particular, criteria used in distinguishing grown-in defects from deformation induced defects will be discussed. Contrast observed from the various dislocations present in the crystals will be explained, and it will be shown how contrast simulation can be used to identify the detailed characteristics of the dislocations (for example, both Burgers vector sign and magnitude). Application of the various techniques to the complete analysis of the distribution, character and origins of grown-in c-axis screw dislocations (both hollow and closed-core), deformation induced basal plane dislocations, and grown-in threading edge dislocations will be discussed.
    Type of Medium: Online Resource
    ISSN: 2151-2043
    URL: Article
    DOI: 10.1149/MA2014-02/40/1975
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2014
    detail.hit.zdb_id: 2438749-6
    Location Call Number Limitation Availability
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    Online Resource
  • 4
    Online Resource
    Online Resource
    Studies of Relaxation Processes and Basal Plane Dislocations in CVD Grown Homoepitaxial Layers of 4H-SiC
    The Electrochemical Society ; 2014
    In:  ECS Meeting Abstracts Vol. MA2014-02, No. 40 ( 2014-08-05), p. 1984-1984
    Details
    In: ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2014-02, No. 40 ( 2014-08-05), p. 1984-1984
    Abstract: It is well known that basal plane dislocations (BPDs) that are replicated from Physical Vapor Transport (PVT) grown 4H-SiC substrates into Chemical Vapor Deposition (CVD) grown homoepitaxial layers can have a detrimental effect on device performance by inducing the expansion of Shockley faults in the epilayer which cause forward voltage drop. As a result, significant advances have been made in engineering the processes by which BPDs are replicated into the epilayer. For example, the conversion of BPDs into less harmful threading edge dislocations (TEDs) at the substrate/epi interface can be enhanced by direct etching of the substrate surface intersections of the BPDs or by growth interrupts which induce etching. Conversion rates of BPDs into TEDs during epilayer growth have been studied in this paper. Secondly, the behavior of BPDs which are replicated into the epilayer has been studied using Synchrotron White Beam X-ray Topography (SWBXT), Monochromatic Beam X-ray Topography (SMBXT), KOH etching and other techniques on pre- and after- epilayer growth of the same substrate. It is observed that dislocation loops inside substrate can move towards interface and then produce interfacial dislocations (IDs) and half-loop arrays (HLAs) under certain growth conditions during homoepitaxy growth of 4H-SiC on off-cut substrates. The HLAs and IDs are observed to form from pairs of opposite sign screw oriented basal plane dislocations in the substrate which replicate into the epilayer and glide opposite directions once critical thickness has been exceeded. Thirdly, we report on both interfacial dislocations and HLA’s generated from: (a) surface sources of BPDs; (b) micropipes; (c) 3C inclusions; and (d) substrate/epilayer interface scratches.It is also observed that some dislocations glide past the interface and into the substrate. This will also be discussed.
    Type of Medium: Online Resource
    ISSN: 2151-2043
    URL: Article
    DOI: 10.1149/MA2014-02/40/1984
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2014
    detail.hit.zdb_id: 2438749-6
    Location Call Number Limitation Availability
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    Online Resource
  • 5
    Online Resource
    Online Resource
    Stacking Fault Formation during Homo-Epitaxy of 4H-SiC
    The Electrochemical Society ; 2014
    In:  ECS Transactions Vol. 64, No. 7 ( 2014-08-08), p. 125-131
    Details
    In: ECS Transactions, The Electrochemical Society, Vol. 64, No. 7 ( 2014-08-08), p. 125-131
    Abstract: Synchrotron topographic and optical microscopic studies are presented of stacking faults formed during homo-epitaxy of 4H-SiC. Grazing incidence synchrotron white beam x-ray topographs reveal V and Y shaped features which transmission topographs reveal to be ¼[0001] Frank-type stacking faults. Geometric analysis of the size and shape of these faults indicates that they are fully contained within the epilayer and appear to be nucleated at the substrate/epilayer interface. Detailed analysis shows that the positions of the V shape stacking faults match with the positions of c-axis threading dislocations with Burgers vectors of c or c+a in the substrate and thus appear to result from the deflection of these dislocations during epilayer growth. Similarly, the Y shaped defects match well with the substrate surface intersections of c-axis threading dislocations with Burgers vectors of c or c+a in the substrate which were deflected onto the basal plane during substrate growth. A model for their formation mechanism is presented.
    Type of Medium: Online Resource
    ISSN: 1938-5862 , 1938-6737
    URL: Article
    DOI: 10.1149/06407.0125ecst
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2014
    Location Call Number Limitation Availability
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    Online Resource
  • 6
    Online Resource
    Online Resource
    Studies of Relaxation Processes and Basal Plane Dislocations in CVD Grown Homoepitaxial Layers of 4H-SiC
    The Electrochemical Society ; 2014
    In:  ECS Transactions Vol. 64, No. 7 ( 2014-08-08), p. 213-222
    Details
    In: ECS Transactions, The Electrochemical Society, Vol. 64, No. 7 ( 2014-08-08), p. 213-222
    Abstract: Dislocation behavior during homo-epitaxy of 4H-SiC on offcut substrates by Chemical Vapor Deposition (CVD) has been studied using Synchrotron X-ray Topography and KOH etching. Studies carried out before and after epilayer growth have revealed that, in some cases, short, edge oriented segments of basal plane dislocation (BPD) inside the substrate can be drawn towards the interface producing screw oriented segments intersecting the growth surface. In other cases, BPD half-loops attached to the substrate surface are forced to glide into the epilayer producing similar screw oriented surface intersections. These screw segments subsequently produce interfacial dislocations (IDs) and half-loop arrays (HLAs). We also report on the formation of IDs and HLAs generated from: (a) surface sources of BPDs; (b) micropipes; (c) 3C inclusions; and (d) substrate/epilayer interface scratches. The HLAs are known to result in Shockley fault expansion within the epilayer which results in forward voltage drop and device failure.
    Type of Medium: Online Resource
    ISSN: 1938-5862 , 1938-6737
    URL: Article
    DOI: 10.1149/06407.0213ecst
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 2014
    Location Call Number Limitation Availability
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    Online Resource
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