In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 50, No. 9S2 ( 2011-09-01), p. 09NB04-
Abstract:
Multiferroic BiFeO 3 –Bi 0.5 Na 0.5 TiO 3 thin films were synthesized on Pt/TiO x /SiO 2 /Si substrates by chemical solution deposition. When the amount of Bi 0.5 Na 0.5 TiO 3 exceeded 30 mol %, perovskite BiFeO 3 –Bi 0.5 Na 0.5 TiO 3 single phase thin films were successfully fabricated in the temperature range of 550–700 °C. Also, the surface morphology of the 0.7BiFeO 3 –0.3Bi 0.5 Na 0.5 TiO 3 thin films was improved by optimizing the amounts of excess Bi and Na in 0.7BiFeO 3 –0.3Bi 0.5 Na 0.5 TiO 3 precursor solutions. However, measurements of ferroelectric polarization-electric field hysteresis loops were difficult for 0.7BiFeO 3 –0.3Bi 0.5 Na 0.5 TiO 3 thin films due to the large leakage current densities at room temperature. At low temperatures, the 0.7BiFeO 3 –0.3Bi 0.5 Na 0.5 TiO 3 thin films demonstrated improved insulating resistance and exhibited potential ferroelectric properties. Furthermore, by Mn doping of the 0.7BiFeO 3 –0.3Bi 0.5 Na 0.5 TiO 3 films, improved ferroelectric properties with weak ferromagnetism were achieved at room temperature. In 0.7Bi(Fe 0.95 Mn 0.05 )O 3 –0.3Bi 0.5 Na 0.5 TiO 3 thin films, ohmic conduction was dominant in an electric field range of 0–200 kV/cm and the abrupt increase in leakage current was suppressed even at high electric fields, whereas nondoped 0.7BiFeO 3 –0.3Bi 0.5 Na 0.5 TiO 3 films exhibited nonohmic conduction with a larger leakage current. The remanent polarization and coercive field of the 0.7Bi(Fe 0.95 Mn 0.05 )O 3 –0.3Bi 0.5 Na 0.5 TiO 3 films at room temperature were approximately 26 µC/cm 2 and 250 kV/cm, respectively.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.50.09NB04
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2011
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink
