In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 26, No. 10R ( 1987-10-01), p. 1634-
Abstract:
A spectral analysis of Deep Level Transient Spectroscopy (SADLTS) is proposed. This method analyzes the transient junction capacitance C ( t )=\int b a S (λ)exp
(-λ· t )dλ in order to determine the finite continuous emission rate spectrum S (λ). SADLTS permits one to obtain more detailed information with a single-temperature scan and spectral analysis instead of the conventional multi-temperature scan or single-exponential analysis. Even if S (λ) includes two peaks at λ 1 and λ 2 , those peaks can be distinguished for λ 2 /λ 1 〉 2.
As an example of the application of SADLTS, deep levels in Si:Au were experimentally investigated. According to the three-dimensional S (λ)- T 2 /λ-1/ T representation, the apparent single peak in the conventional DLTS was found toconsist of two adjacent levels with activation energies and capture cross sections of E B1 =0.51 eV, σ B1 =4.0×10 -15 cm 2 and E B2 =0.47 eV, σ B2 =1.1×10 -15 cm 2 , respectively.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.26.1634
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1987
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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