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  • Mori, Yukimasa  (4)
  • 1
    Online Resource
    Online Resource
    IOP Publishing ; 2004
    In:  Japanese Journal of Applied Physics Vol. 43, No. No. 3A ( 2004-2-13), p. L346-L348
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 43, No. No. 3A ( 2004-2-13), p. L346-L348
    Type of Medium: Online Resource
    ISSN: 0021-4922
    RVK:
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    RVK:
    Language: English
    Publisher: IOP Publishing
    Publication Date: 2004
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
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  • 2
    Online Resource
    Online Resource
    American Vacuum Society ; 2005
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 23, No. 6 ( 2005-11-01), p. 1647-1656
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 23, No. 6 ( 2005-11-01), p. 1647-1656
    Abstract: Detailed studies on the thermal reaction behavior of polycrystalline aluminum nitride (AlN) with effusive xenon difluoride (XeF2) have been carried out over the sample temperature (Ts) range from 300to920K using molecular beam mass spectrometry combined with a time-of-flight technique and ex situ surface analyses, i.e., X-ray photoelectron spectroscopy, Auger electron spectroscopy, and scanning electron microscopy (SEM). The species desorbed from the AlN∕XeF2 system were monitored using molecular beam mass spectrometry, as a function of sample temperature. Above Ts=800K, the desorbed reaction products were identified as N2 and AlF3, and their flux intensities increase monotonically as the sample temperature is increased. The flux intensity of XeF2 desorbed after physisorption to the AlN surface is found to decrease as Ts is raised above Ts=800K, and approximately one half of the incoming XeF2 is consumed by the thermal reaction at 920K. The results of surface analyses show that the thermal reaction of AlN with XeF2 starts at approximately Ts=700K, forming a reaction layer composed of AlF3. The AlF3 layer becomes thick as Ts is increased from Ts=700–800K. Above Ts=800K, however, as a result of fast desorption of AlF3 and F atoms from the AlF3 layer, only partially fluorinated AlFx (x=1 and/or 2) layers are formed and the bulk AlN is revealed again. The SEM photographs indicate that the surfaces exposed above Ts=850K are strongly etched but a slight change is observed at Ts⩽800K. On the basis of these results, three reaction stages are proposed for the AlN∕XeF2 reaction depending on the sample temperature range: Stage 1 (300⩽Ts & lt;700K); no reaction, stage 2 (700⩽Ts & lt;800K); surface fluorination, and stage 3 (800⩽Ts); etching. At stage 3, AlF3 formed on the surface starts to evaporate and fast etching proceeds, since the vapor pressure of AlF3 is high enough in this temperature range.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2005
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 3
    Online Resource
    Online Resource
    American Vacuum Society ; 2005
    In:  Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Vol. 23, No. 6 ( 2005-11-01), p. 1638-1646
    In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 23, No. 6 ( 2005-11-01), p. 1638-1646
    Abstract: Studies on the thermal reaction behavior of polycrystalline cubic silicon carbide (SiC) with effusive xenon difluoride (XeF2) have been carried out over the sample temperature (Ts) range from 300to900K using molecular beam quadrupole mass spectrometry combined with a time-of-flight technique and ex situ surface analyses, i.e., x-ray photoelectron spectroscopy (XPS) and scanning Auger microscopy (SAM). Above Ts=700K, the reaction product desorbed from the SiC surface was identified as SiF4. The flux intensity of SiF4 increases monotonically as a function of Ts above 700K. The flux intensity of XeF2 desorbed from the SiC surface decreases above Ts=700K, and at Ts=900K, approximately 10% of the incident XeF2 was found to be consumed by the thermal reaction. No ions at m∕e=31 (CF+), 50 (CF2+), and 69 (CF3+) to be ascribed to carbon fluoride species were detected under the present experimental conditions, and thus C atoms in SiC were found to remain as residue. From the XPS and SAM observations of the SiC samples exposed to XeF2 vapor at 1.8×10−4Torr, we find that fluorination of a native oxide layer formed on the SiC surface takes place at Ts=300K. At Ts=520K, the native oxide layer was partially removed from the surface, and the presence of a reaction layer composed of partially fluorinated C atoms was observed. As Ts is increased above 520K, the reaction layer becomes thicker. Above Ts=700K, a thick reaction layer mainly composed of C atoms is formed, while only the near-surface reaction layer is fluorinated. The fast desorption of SiF4 products reduces the Si concentration in the SiC surface and the residual C atoms having comprised the SiC lattice are left as the reaction layer.
    Type of Medium: Online Resource
    ISSN: 0734-2101 , 1520-8559
    RVK:
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2005
    detail.hit.zdb_id: 1475424-1
    detail.hit.zdb_id: 797704-9
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  • 4
    In: Applied Surface Science, Elsevier BV, Vol. 217, No. 1-4 ( 2003-7), p. 82-87
    Type of Medium: Online Resource
    ISSN: 0169-4332
    Language: English
    Publisher: Elsevier BV
    Publication Date: 2003
    detail.hit.zdb_id: 2002520-8
    detail.hit.zdb_id: 52886-9
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