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  • Mizue, Chihoko  (4)
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Subjects(RVK)
  • 1
    Online Resource
    Online Resource
    Capacitance–Voltage Characteristics of Al 2 O 3 /AlGaN/GaN Structures and State Density Distribution at Al 2 O 3 /AlGaN Interface
    IOP Publishing ; 2011
    In:  Japanese Journal of Applied Physics Vol. 50, No. 2R ( 2011-02-01), p. 021001-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 50, No. 2R ( 2011-02-01), p. 021001-
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.7567/JJAP.50.021001
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2011
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Process Conditions for Improvement of Electrical Properties of Al 2 O 3 /n-GaN Structures Prepared by Atomic Layer Deposition
    IOP Publishing ; 2010
    In:  Japanese Journal of Applied Physics Vol. 49, No. 8R ( 2010-08-01), p. 080201-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 49, No. 8R ( 2010-08-01), p. 080201-
    Abstract: The effects of fabrication processes on the electrical properties of Al 2 O 3 /GaN structures prepared by atomic layer deposition were investigated. The annealing process at 800 °C for the formation of ohmic electrodes brought a large number of microcrystallization regions into the Al 2 O 3 layer, causing a marked leakage in the current–voltage characteristics of the Al 2 O 3 /GaN structure. The “ohmic-first” process with a SiN protection layer was thus applied to the GaN surface. In this process, the amorphous phase in the atomic configuration of Al 2 O 3 was maintained, leading to the sufficient suppression of leakage current at the Al 2 O 3 /GaN interface. In addition, the Al 2 O 3 /GaN structures showed good capacitance–voltage characteristics, resulting in low interface state densities of less than 1×10 12 cm -2 eV -1 .
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.49.080201
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2010
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 3
    Online Resource
    Online Resource
    Capacitance–Voltage Characteristics of Al 2 O 3 /AlGaN/GaN Structures and State Density Distribution at Al 2 O 3 /AlGaN Interface
    IOP Publishing ; 2011
    In:  Japanese Journal of Applied Physics Vol. 50, No. 2R ( 2011-02-01), p. 021001-
    Details
    In: Japanese Journal of Applied Physics, IOP Publishing, Vol. 50, No. 2R ( 2011-02-01), p. 021001-
    Abstract: The potential modulation and interface states of Al 2 O 3 /Al 0.25 Ga 0.75 N/GaN structures prepared by atomic layer deposition (ALD) were characterized by capacitance–voltage ( C – V ) measurements. We observed the peculiar C – V characteristics with two capacitance steps in forward and reverse bias regions, corresponding to the electron accumulation or depletion behavior at the Al 2 O 3 /AlGaN and AlGaN/GaN interfaces. From the experimental and calculated C – V characteristics, it was found that the charging and discharging of interface states near the AlGaN conduction-band edge mainly caused the stretch-out and hysteresis of the C – V curve at the forward bias. On the other hand, it is likely that the interface states near the midgap or deeper in energies act as fixed charges. From the bias-dependent hysteresis voltage in the forward bias region and the photo-induced voltage shift at the reverse bias, we estimated the interface state density distribution at the Al 2 O 3 /AlGaN interface for the first time. The present ALD-Al 2 O 3 /AlGaN/GaN structure showed relatively high interface state densities with a minimum density of 1×10 12 cm -2 eV -1 or higher.
    Type of Medium: Online Resource
    ISSN: 0021-4922 , 1347-4065
    URL: Article
    DOI: 10.1143/JJAP.50.021001
    RVK:
    UA 4210.1
    RVK:
    UA 4210.2
    RVK:
    UA 4210
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2011
    detail.hit.zdb_id: 218223-3
    detail.hit.zdb_id: 797294-5
    detail.hit.zdb_id: 2006801-3
    detail.hit.zdb_id: 797295-7
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 4
    Online Resource
    Online Resource
    Interface state characterization of ALD‐Al 2 O 3 /GaN and ALD‐Al 2 O 3 /AlGaN/GaN structures
    Wiley ; 2012
    In:  physica status solidi c Vol. 9, No. 6 ( 2012-06), p. 1356-1360
    Details
    In: physica status solidi c, Wiley, Vol. 9, No. 6 ( 2012-06), p. 1356-1360
    Abstract: We have characterized the interface states of Al 2 O 3 /GaN and Al 2 O 3 /AlGaN/GaN structures prepared by atomic layer deposition using the conventional and photo‐assisted capacitance‐voltage ( C–V ) measurements. In order to control the interface states, an N 2 O‐radical treatment was applied to the GaN and AlGaN surfaces prior to the deposition of the Al 2 O 3 layer. We observed good C–V behavior and a relatively low density of interface states for the N 2 O‐radical treated Al 2 O 3 /GaN structure. To estimate the state density distributions at the Al 2 O 3 /AlGaN interface, we applied the photo‐assisted C–V measurement to the Al 2 O 3 /AlGaN/GaN heterostructures. The present Al 2 O 3 /AlGaN structre showed higher interface state densities than the Al 2 O 3 /GaN structure. However, we found that the N 2 O‐radical treatment is effective in reducing the density of interface states at the Al 2 O 3 /GaN and Al 2 O 3 /AlGaN systems (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
    Type of Medium: Online Resource
    ISSN: 1862-6351 , 1610-1642
    URL: Issue
    URL: Article
    DOI: 10.1002/pssc.v9.6
    DOI: 10.1002/pssc.201100656
    Language: English
    Publisher: Wiley
    Publication Date: 2012
    detail.hit.zdb_id: 2105580-4
    detail.hit.zdb_id: 2102966-0
    Location Call Number Limitation Availability
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    Online Resource
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