In:
Applied Physics Letters, AIP Publishing, Vol. 109, No. 26 ( 2016-12-26)
Abstract:
Control over nonvolatile magnetization rotation and resistivity change by an electric field in La0.6Sr0.4MnO3 thin films grown on (011) oriented 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 substrates are studied. By utilizing an in-plane strain induced by a side ferroelectric switching with pulsed electric fields from −2.5 kV/cm to +5 kV/cm along [011¯], a nonvolatile and reversible 90°-rotation of the magnetic easy-axis is achieved, corresponding to −69.68% and +174.26% magnetization switching along the [100] and [011¯] directions, respectively. The strain induced nonvolatile resistivity change is approximately 3.6% along the [011¯] direction. These findings highlight potential strategies for electric-field-driven spintronic devices.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2016
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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