In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 3S ( 1997-03-01), p. 1900-
Abstract:
The process of oxidation of titanium using an atomic force microscope was applied for ultrafast metal-semicon- ductor-metal photoconductive switches. The photoconductive gap was formed by oxidation of a 4-nm-thick titanium layer. The photoconductive gap was 43 nm wide and covered with the oxidized titanium. The oxidized titanium is not only a good insulator but also transparent to the excitation beam. A full-width at half maximum(FWHM) response of 770 fs for the transverse component of the electric field was obtained at a bias voltage of 6 V.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.1900
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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