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  • AIP Publishing  (6)
  • Markevich, V. P.  (6)
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  • AIP Publishing  (6)
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  • 1
    Online Resource
    Online Resource
    Tin-vacancy complex in germanium
    AIP Publishing ; 2011
    In:  Journal of Applied Physics Vol. 109, No. 8 ( 2011-04-15)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 109, No. 8 ( 2011-04-15)
    Abstract: Electrically active defects introduced into Ge crystals co-doped with tin and phosphorus atoms by irradiation with 6 MeV electrons have been studied by means of transient capacitance techniques and ab-initio density functional modeling. It is shown that Sn atoms are effective traps for vacancies (V) in the irradiated Ge:Sn+P crystals. The electronic structure of Sn-V is unraveled on the basis of hybrid states from a Sn atom and a divacancy. Unlike the case for Si, Sn-V in Ge is not a donor. A hole trap with 0.19 eV activation energy for hole emission to the valence band is assigned to an acceptor level of the Sn-V complex. The Sn-V complex anneals out upon heat-treatments in the temperature range 50–100 °C. Its disappearance is accompanied by the formation of phosphorus-vacancy centers.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.3574405
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2011
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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    Online Resource
  • 2
    Online Resource
    Online Resource
    E 1/ E 2 traps in 6H-SiC studied with Laplace deep level transient spectroscopy
    AIP Publishing ; 2013
    In:  Applied Physics Letters Vol. 102, No. 3 ( 2013-01-21)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 102, No. 3 ( 2013-01-21)
    Abstract: Electrically active defects in n-type 6H-SiC diode structures have been studied by deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS. It is shown that the commonly observed broadened DLTS peak previously ascribed to two traps referenced as E1/E2 has three components with activation energies for electron emission of 0.39, 0.43, and 0.44 eV. Further, defects associated with these emission signals have similar electronic structure, each possessing two energy levels with negative-U ordering in the upper half of the 6H-SiC gap. It is argued that the defects are related to a carbon vacancy at three non-equivalent lattice sites in 6H-SiC.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4788814
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2013
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 3
    Online Resource
    Online Resource
    Donor levels of the divacancy-oxygen defect in silicon
    AIP Publishing ; 2014
    In:  Journal of Applied Physics Vol. 115, No. 1 ( 2014-01-07)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 115, No. 1 ( 2014-01-07)
    Abstract: The elimination of divacancies (V2) upon isochronal and isothermal annealing has been studied in oxygen-rich p-type silicon by means of deep level transient spectroscopy (DLTS) and high resolution Laplace DLTS. Divacancies were introduced into the crystals by irradiation with 4 or 6 MeV electrons. The temperature range of the divacancy disappearance was found to be 225-300 °C upon 30 min isochronal annealing in the samples studied. A clear anti-correlation between the disappearance of V2 and the appearance of two hole traps with activation energies for hole emission of 0.23 eV and 0.08 eV was observed. It is argued that these traps are related to the first and second donor levels of the divacancy-oxygen (V2O) complex, respectively. Significant electric field enhancement of the hole emission from the second donor level of the V2O center occurred in the diodes studied. It is shown that in the range of electric field from 4 × 103 to 1.2 × 104 V/cm the emission enhancement is associated with phonon-assisted tunnelling.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.4837995
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2014
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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    Online Resource
  • 4
    Online Resource
    Online Resource
    Evidence for an iron-hydrogen complex in p-type silicon
    AIP Publishing ; 2015
    In:  Applied Physics Letters Vol. 107, No. 3 ( 2015-07-20)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 107, No. 3 ( 2015-07-20)
    Abstract: Interactions of hydrogen with iron have been studied in Fe contaminated p-type Czochralski silicon using capacitance-voltage profiling and deep level transient spectroscopy (DLTS). Hydrogen has been introduced into the samples from a silicon nitride layer grown by plasma enhanced chemical vapor deposition. After annealing of the Schottky diodes on Si:Fe + H samples under reverse bias in the temperature range of 90–120 °C, a trap has been observed in the DLTS spectra which we have assigned to a Fe-H complex. The trap is only observed when a high concentration of hydrogen is present in the near surface region. The trap concentration is higher in samples with a higher concentration of single interstitial Fe atoms. The defect has a deep donor level at Ev + 0.31 eV. Direct measurements of capture cross section of holes have shown that the capture cross section is not temperature dependent and its value is 5.2 × 10−17 cm2. It is found from an isochronal annealing study that the Fe-H complex is not very stable and can be eliminated completely by annealing for 30 min at 125 °C.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4927323
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2015
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 5
    Online Resource
    Online Resource
    Titanium in silicon: Lattice positions and electronic properties
    AIP Publishing ; 2014
    In:  Applied Physics Letters Vol. 104, No. 15 ( 2014-04-14), p. 152105-
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 104, No. 15 ( 2014-04-14), p. 152105-
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4871702
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2014
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 6
    Online Resource
    Online Resource
    Passivation of titanium by hydrogen in silicon
    AIP Publishing ; 2013
    In:  Applied Physics Letters Vol. 103, No. 13 ( 2013-09-23)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 103, No. 13 ( 2013-09-23)
    Abstract: Interactions of hydrogen with titanium have been studied in Ti-doped n-type crystalline Si using capacitance-voltage profiling and deep level transient spectroscopy (DLTS). Hydrogen plasma treatments of the samples at room temperature have resulted in the suppression of DLTS signals due to interstitial Ti atoms (Tii) and the appearance of three strong DLTS peaks, which are related to three different Ti-H defects. After annealing of the hydrogenated samples at 150 °C in nitrogen, the signals due to Tii and two of the three H-related defects were not detected in the spectra showing that almost complete passivation of all electrically active defects occurred.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.4822329
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2013
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Location Call Number Limitation Availability
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    Online Resource
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