In:
Chinese Physics B, IOP Publishing, Vol. 31, No. 6 ( 2022-06-01), p. 068501-
Kurzfassung:
A novel normally-off AlGaN/GaN high-electron-mobility transistor (HEMT) with a p-GaN Schottky hybrid gate (PSHG) is proposed, and compared with the conventional p-GaN normally-off AlGaN/GaN HEMTs. This structure can be realized by selective etching of p-GaN layer, which enables the Schottky junction and PN junction to control the channel charge at the same time. The direct current (DC) and switching characteristics of the PSHG HEMTs are simulated by Slivaco TCAD, and the p-GaN HEMTs and conventional normally-on HEMTs are also simulated for comparison. The simulation results show that the PSHG HEMTs have a higher current density and a lower on-resistance than p-GaN HEMTs, which is more obvious with the decrease of p-GaN ratios of the PSHG HEMTs. The breakdown voltage and threshold voltage of the PSHG HEMTs are very close to those of the p-GaN HEMTs. In addition, the PSHG HEMTs have a higher switching speed than the conventional normally-on HEMTs, and the p-GaN layer ratio has no obvious effect on the switching speed.
Materialart:
Online-Ressource
ISSN:
1674-1056
DOI:
10.1088/1674-1056/ac3739
Sprache:
Unbekannt
Verlag:
IOP Publishing
Publikationsdatum:
2022
ZDB Id:
2412147-2
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