In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 52, No. 6S ( 2013-06-01), p. 06GE01-
Abstract:
Polycrystalline silicon (poly-Si) fin-channel tri-gate (TG)- and double-gate (DG)-type flash memories with a thin n + -poly-Si floating gate (FG) and different control-gate (CG) lengths ( L CG 's) from 76 to 256 nm have been fabricated and their electrical characteristics including statistical threshold voltage ( V t ) and subthreshold slope ( S -slope) have been comparatively investigated before and after one program/erase (P/E) cycle. It was experimentally found that better short-channel effect (SCE) immunity, a smaller V t variation, and a higher program speed are obtained in TG-type flash memories than in DG-type memories. The higher performance of TG-type flash memories is contributed by the additional top gate and recessed bottom silicon dioxide (SiO 2 ) regions, which strengthen the controllability of the channel potential and increase the coupling ratio of the FG to the CG. Therefore, the developed poly-Si fin-channel TG structure is expected to be very useful for the fabrication of high-density and low-cost flash memories.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.52.06GE01
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2013
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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