In:
Physica Scripta, IOP Publishing, Vol. 99, No. 2 ( 2024-02-01), p. 025909-
Abstract:
Plasma enhanced chemical vapor deposition (PECVD) method has been utilized to fabricate phosphorous-doped hydrogenated nanocrystalline silicon carbide (P-doped nc-SiC x :H) thin films on polyethylene terephthalate (PET) substrate. With the aim at obtaining highly conductive thin films, H 2 /Ar mixed dilution has been applied for creating plasma during deposition, and the variation of structural, electrical and optical properties with H 2 /Ar flow ratio R H have been systemically investigated through a series of characterizations. Results show that the highly crystallized P-doped nc-SiC x :H thin film can be prepared while the properties are controllable through adjusting R H . In the case of R H = 0.75, the maximum dark conductivity (6.42 S cm −1 ) and a wide optical bandgap (1.93 eV) are attained. Finally, detail discussion has been made to illustrate the growth mechanism of the flexible P-doped nc-SiC x :H thin films.
Type of Medium:
Online Resource
ISSN:
0031-8949
,
1402-4896
DOI:
10.1088/1402-4896/ad1905
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2024
detail.hit.zdb_id:
1477351-X
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