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  • Liu, Hao  (6)
  • Ma, Bojie  (6)
  • Ren, Xiaomin  (6)
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  • 1
    Online Resource
    Online Resource
    High slope-efficiency quantum-dot lasers grown on planar exact silicon (001) with asymmetric waveguide structures
    Optica Publishing Group ; 2022
    In:  Optics Express Vol. 30, No. 7 ( 2022-03-28), p. 11563-
    Details
    In: Optics Express, Optica Publishing Group, Vol. 30, No. 7 ( 2022-03-28), p. 11563-
    Abstract: We report electrically pumped continuous-wave (CW) InAs/GaAs quantum dot lasers directly grown on planar exact silicon (001) with asymmetric waveguide structures. Surface hydrogen-annealing for the GaAs/ Si (001) templates and low-temperature growth for GaInP upper cladding layers were combined in the growth of the laser structure to achieve a high slope efficiency. For the broad-stripe edge-emitting lasers with 2-mm cavity length and 20-µm stripe width made from the above laser structure, a threshold current density of 203.5 A/cm 2 and a single-facet slope efficiency of 0.158 W/A are achieved at ∼1.31 µm band under CW conditions. The extrapolated mean-time-to-failure reaches up to 21000 hours at room temperature, which is deduced from the data measured from C-mount packaged devices. Importantly, these results can provide a practical strategy to realize 1.3 µm wavelength band distributed feedback lasers directly on planar exact Si (001) templates with thin buffer layers.
    Type of Medium: Online Resource
    ISSN: 1094-4087
    URL: Article
    DOI: 10.1364/OE.454895
    Language: English
    Publisher: Optica Publishing Group
    Publication Date: 2022
    detail.hit.zdb_id: 1491859-6
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  • 2
    Online Resource
    Online Resource
    InAs/GaAs quantum-dot lasers grown on on-axis Si (001) without dislocation filter layers
    Optica Publishing Group ; 2023
    In:  Optics Express Vol. 31, No. 3 ( 2023-01-30), p. 4862-
    Details
    In: Optics Express, Optica Publishing Group, Vol. 31, No. 3 ( 2023-01-30), p. 4862-
    Abstract: InAs/GaAs quantum dot (QD) laser monolithically grown on silicon is one of the potential approaches to realizing silicon-based light sources. However, the mismatch between GaAs and Si generates a high density of threading dislocations (TDs) and antiphase boundaries (APBs), which trap carriers and adversely affect device performance. In this paper, we present a simple method to reduce the threading dislocation density (TDD) merely through GaAs buffer, eliminating the intricate dislocation filter layers (DFLs) as well as any intermediate buffer layers whose compositions are different from the target GaAs. An APB-free epitaxial 2.5 µm GaAs film was grown on exact Si (001) by metalorganic chemical vapor deposition (MOCVD) with a TDD of 9.4 × 10 6  cm −2 . InAs/GaAs QDs with a density of 5.2 × 10 10  cm −2 were grown on this GaAs/Si (001) virtual substrate by molecular beam epitaxy (MBE) system. The fabricated QD laser has achieved a single facet room temperature continuous-wave output power of 138 mW with a threshold current density of 397 A/cm 2 and a lasing wavelength of 1306 nm. In this work, we propose a simplified method to fabricate high-power QD lasers, which is expected to promote the application of photonic integrated circuits.
    Type of Medium: Online Resource
    ISSN: 1094-4087
    URL: Article
    DOI: 10.1364/OE.475976
    Language: English
    Publisher: Optica Publishing Group
    Publication Date: 2023
    detail.hit.zdb_id: 1491859-6
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  • 3
    Online Resource
    Online Resource
    Improved performance of InGaAs/AlGaAs quantum well lasers on silicon using InAlAs trapping layers
    Optica Publishing Group ; 2023
    In:  Optics Express Vol. 31, No. 5 ( 2023-02-27), p. 7900-
    Details
    In: Optics Express, Optica Publishing Group, Vol. 31, No. 5 ( 2023-02-27), p. 7900-
    Abstract: InGaAs/AlGaAs multiple quantum well lasers grown on silicon (001) by molecular beam epitaxy have been demonstrated. By inserting InAlAs trapping layers into AlGaAs cladding layers, misfit dislocations easily located in the active region can be effectively transferred out of the active region. For comparison, the same laser structure without the InAlAs trapping layers was also grown. All these as-grown materials were fabricated into Fabry-Perot lasers with the same cavity size of 20 × 1000 µm 2 . The laser with trapping layers achieved a 2.7-fold reduction in threshold current density under pulsed operation (5 µs-pulsed width, 1%-duty cycle) compared to the counterpart, and further realized a room-temperature continuous-wave lasing with a threshold current of 537 mA which corresponds to a threshold current density of 2.7 kA/cm 2 . When the injection current reached 1000 mA, the single-facet maximum output power and slope efficiency were 45.3 mW and 0.143 W/A, respectively. This work demonstrates significantly improved performances of InGaAs/AlGaAs quantum well lasers monolithically grown on silicon, providing a feasible solution to optimize the InGaAs quantum well structure.
    Type of Medium: Online Resource
    ISSN: 1094-4087
    URL: Article
    DOI: 10.1364/OE.475660
    Language: English
    Publisher: Optica Publishing Group
    Publication Date: 2023
    detail.hit.zdb_id: 1491859-6
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  • 4
    Online Resource
    Online Resource
    Reliability enhancement of InGaAs/AlGaAs quantum-well lasers on on-axis Si (001) substrate
    AIP Publishing ; 2023
    In:  APL Materials Vol. 11, No. 9 ( 2023-09-01)
    Details
    In: APL Materials, AIP Publishing, Vol. 11, No. 9 ( 2023-09-01)
    Abstract: The enhancement of the reliability of the silicon-based III–V quantum well lasers, especially of those on an on-axis Si (001) substrate, is of great importance now a days for the development of Si-based photonic and even optoelectronic integrated circuits and is really quite challenging. As an experimental advancement, mainly by inserting a pair of InAlAs strained layers separately into the upper and lower AlGaAs cladding layers to effectively prevent the formation of the in-plane gliding misfit-dislocations within the boundary planes of the active region, the longest room-temperature and continuous-wave lifetime of the InGaAs/AlGaAs quantum well lasers on an on-axis Si (001) substrate with a cavity length of 1500 µm and a ridge width of 20 µm has been prolonged from a very initial record of ∼90 s to the present length longer than 31 min. While, the highest continuous-wave operation temperature of another one with a cavity length of 1000 µm and a ridge width of 10 µm has been shown as 103 °C with an extracted characteristic temperature of 152.7 K, further enhancement of the device reliability is still expected and would mainly depend on the level of the threading-dislocation-density reduction in the GaAs/Si virtual substrate.
    Type of Medium: Online Resource
    ISSN: 2166-532X
    URL: Article
    DOI: 10.1063/5.0162387
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 2722985-3
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  • 5
    Online Resource
    Online Resource
    Demonstration of room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001)
    AIP Publishing ; 2022
    In:  Applied Physics Letters Vol. 121, No. 6 ( 2022-08-08)
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 121, No. 6 ( 2022-08-08)
    Abstract: Room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001) has been demonstrated. A 420 nm thick GaAs epilayer completely free of antiphase domains was initially grown on the silicon substrate in a metal-organic chemical vapor deposition system and the other epilayers, including four sets of five-period strained-layer superlattices and the laser-structural layers, were successively grown in a molecular beam epitaxy system. The lasers were prepared as broad-stripe Fabry–Pérot ones with a stripe width of 21.5 μm and a cavity length of 1 mm. Typically, the threshold current and the corresponding threshold current density are 186.4 mA and 867 A/cm2, respectively. The lasing wavelength is around 980 nm, and the slope efficiency is 0.097 W/A with a single-facet output power of 22.5 mW at an injection current of 400 mA. This advancement makes the silicon-based monolithic optoelectronic integration relevant to quantum well lasers more promising with an enhanced feasibility.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/5.0098264
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 6
    Online Resource
    Online Resource
    Design of distributed feedback lasers grown on Si using time-domain traveling wave model combined with mode refractive index method
    IOP Publishing ; 2023
    In:  Laser Physics Vol. 33, No. 9 ( 2023-09-01), p. 095801-
    Details
    In: Laser Physics, IOP Publishing, Vol. 33, No. 9 ( 2023-09-01), p. 095801-
    Abstract: This paper proposes an optimization method combining the time-domain traveling wave model and the mode refractive index method, employed for characterizing both the transverse and longitudinal modes of quantum dot distributed feedback (DFB) lasers grown on Si. We use this method to optimize the overall performance of the Si-based DFB laser, and determine the material and chip structural parameters, including the ridge width, etching depth, grating thickness and grating position as optimization parameters. Here, the optimal DFB laser operating under fundamental transverse and single longitudinal mode is obtained. Its threshold current is as low as 5 mA, the slope efficiency is as high as 0.77 mW mA −1 , and the side mode suppression ratio is up to 48 dB. When the injection current is 150 mA, the output power exceeds 100 mW. The corresponding ridge width, etching depth and grating thickness are 2 μ m, 1.3 μ m and 20 nm, respectively. The distance from the grating to the active region is 200 nm. Therefore, the novel method presented in this paper offers an effective scheme for the design of DFB lasers grown on Si with excellent performance.
    Type of Medium: Online Resource
    ISSN: 1054-660X , 1555-6611
    URL: Article
    DOI: 10.1088/1555-6611/ace3bc
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 2228434-5
    detail.hit.zdb_id: 1092786-4
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