In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 51, No. 10R ( 2012-10-01), p. 103003-
Abstract:
Recent reports on the observation of room temperature ferromagnetism in Cu doped ZnO have been highly regarded by the scientific community. There are several contradicting reports where some authors have confirmed the occurrence of ferromagnetism in ZnO while others have ruled it out. Even in studies where room temperature ferromagnetism is reported, the effect of carrier type with the ferromagnetic properties is still unclear. To study this problem, the observation of room temperature ferromagnetism in Cu-doped (5%) single crystalline ZnO films grown on Si substrates was observed. ZnO films were prepared by pulsed laser deposition. Hall measurements showed that the Zn 0.95 Cu 0.05 O film was n-type with carrier density around 4.3×10 17 cm -3 . This film exhibits room-temperature ferromagnetism with a saturation magnetization of 0.31 µ B /Cu atom. The predominant valence state of the doped Cu atoms is monovalent. When additional electrons were introduced into the films, the ferromagnetism was weaken and vanished. Our results confirm that the p-type nature of the film is not essential for realizing ferromagnetic characteristics, if only the concentration of n-type carriers were not very high.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.51.103003
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2012
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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