In:
Journal of Materials Research, Springer Science and Business Media LLC, Vol. 27, No. 4 ( 2012-02-28), p. 730-733
Kurzfassung:
Two kinds of type-II heterostructures (HSs) of ZnO (wurtzite)/ZnSe (wurtzite) [ZnO (WZ)/ZnSe (WZ)] and ZnO (wurtzite)/ZnSe (zinc blende) [ZnO (WZ)/ZnSe (ZB)] were designed for photovoltaic applications by first-principle calculations. The calculated effective bandgap of 1.51 eV for the ZnO (WZ)/ZnSe (WZ) HS is more favorable for solar cell applications compared to that of 1.69 eV for the ZnO (WZ)/ZnSe (ZB) HS. Furthermore, the electrons and holes are more effectively separated at the interface of ZnO (WZ)/ZnSe (WZ) HS due to the stronger misfit stress field. Finally, a strained ZB ZnSe layer was introduced to transport the separated holes from WZ ZnSe layer, and an optimal structure of ZnO (WZ)/ZnSe (WZ)/ZnSe (ZB) was proposed to realize a solar cell with near-infrared response.
Materialart:
Online-Ressource
ISSN:
0884-2914
,
2044-5326
DOI:
10.1557/jmr.2011.417
Sprache:
Englisch
Verlag:
Springer Science and Business Media LLC
Publikationsdatum:
2012
ZDB Id:
54876-5
ZDB Id:
2015297-8
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