In:
ECS Transactions, The Electrochemical Society, Vol. 25, No. 10 ( 2009-09-25), p. 91-98
Abstract:
In this paper, a self-assembled lateral growth of ZnO nanowire (NW) photodetector has been successfully synthesized by an aqueous solution method at low temperature (85oC). The growth of ZnO NWs on a silicon substrate with a ZnO seeding layer exhibits single-phase wurtzite ZnO crystal structure, and grows along the c-axis direction. Furthermore, we have demonstrated the current-voltage characteristics and photoresponse of the ZnO NWs with and without UV (325 nm) illumination. Therefore, this low-temperature and simple fabrication process is a viable processing technique to selectively grow lateral ZnO NWs on a flat substrate of any material, with potential applications in flexible NW devices.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2009
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