In:
Journal of Applied Physics, AIP Publishing, Vol. 75, No. 5 ( 1994-03-01), p. 2618-2627
Abstract:
A systematic study of the refractive index and absorption coefficient of GaAs/AlxGa1−xAs quantum wells as a function of electric field is presented. In this model, the effective-mass mismatches between GaAs and AlxGa1−xAs have been considered. For the interband optical absorption, we have considered the effect of the final-state interactions, and found an analytical function well describing this effect. The line-shape functions and their appropriate linewidths due to the inhomogeneous broadening mechanisms have been considered as a function of layer thicknesses, Al fraction, electric field, and residual doping density in the intrinsic multiple-quantum-well (MQW) region of a p-i-n optical modulator. The calculated absorption coefficient as a function of wavelength and electric field agrees very well with the experimental data. The calculated refractive index is indirectly verified by comparing the calculated reflectance spectra with the measured data of a MQW reflection modulator.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1994
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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