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  • Lien, Der-Hsien  (3)
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  • 1
    Online Resource
    Online Resource
    Effects of Mg Doping on Double Channel Layer Atmospheric Pressure-Plasma Enhanced Chemical Vapor Deposition Fabricated Amorphous InGaZnO Thin Film Transistors
    American Scientific Publishers ; 2021
    In:  Journal of Nanoelectronics and Optoelectronics Vol. 16, No. 9 ( 2021-09-01), p. 1412-1416
    Details
    In: Journal of Nanoelectronics and Optoelectronics, American Scientific Publishers, Vol. 16, No. 9 ( 2021-09-01), p. 1412-1416
    Abstract: Amorphous IGZO (a-IGZO) has been proved to be a suitable material for the channel layer in a thin film transistor, showing high mobility even in low temperature fabrication, device electrical characteristic exceeds a-Si or other metal oxide semiconductor materials. In this work, bottom gate top TFT is fabricated. With Atmosphere Pressure-PECVD (AP-PECVD), a-IGZO is deposited as device channel layer. A double channel layer is tested with Mg doping added in the bottom layer. This work focus on how the Mg doping concentration in the bottom layer affects device electrical characteristic. The result for best device characteristics is 5% Mg doping, showing highest mobility, lowest threshold voltage, and nearly 10 8 in I on /I off . A suitable doping concentration can lower interface defect density and affect grain size, which both leads to a better device characteristics. However, device characteristics show sign of degradation with excess doping concentration.
    Type of Medium: Online Resource
    ISSN: 1555-130X
    URL: Article
    DOI: 10.1166/jno.2021.3086
    Language: English
    Publisher: American Scientific Publishers
    Publication Date: 2021
    Location Call Number Limitation Availability
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  • 2
    Online Resource
    Online Resource
    Study of InGaZnO Thin Film Transistors With Dual Treatment of Pre-Oxidation ZrO 2 High- κ Dielectric and Post-Oxidation InGaZnO Channel by Neutral Beam System
    American Scientific Publishers ; 2021
    In:  Journal of Nanoelectronics and Optoelectronics Vol. 16, No. 11 ( 2021-11-01), p. 1733-1738
    Details
    In: Journal of Nanoelectronics and Optoelectronics, American Scientific Publishers, Vol. 16, No. 11 ( 2021-11-01), p. 1733-1738
    Abstract: With better field-effect mobility ( 〉 10 cm2/V·S), smaller subthreshold swing (S.S), and other electrical characteristics, amorphous IGZO thin film transistors (a-IGZO TFTs) has been studied extensively for its promising applications, such as liquid crystal displays and flat-panel displays. In this investigation, TFT devices are experimented to enhance the electrical characteristics. Atmosphere Pressure-PECVD (AP-PECVD) is used to deposit a-IGZO, which is designed as device channel layer. In order to maintain enough gate control ability with thinner effective oxide thickness (EOT), high- κ material ZrO 2 is used as dielectric, lowering the gate leaking current. With post dual neutral beams O 2 plasma treated on both a-IGZO channel layer 400 W and ZrO 2 dielectric 100 W, the best result for experimental devices show that the a-IGZO TFT has electrical characteristics of field-effect mobility of 22.22 cm 2 /V·S, threshold voltage (V T ) of 2.86 V, S.S of 74 mV/decade, and I on /I off ratio of 8.2×10 5 . Keywor
    Type of Medium: Online Resource
    ISSN: 1555-130X
    URL: Article
    DOI: 10.1166/jno.2021.3120
    Language: English
    Publisher: American Scientific Publishers
    Publication Date: 2021
    Location Call Number Limitation Availability
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    Online Resource
  • 3
    Online Resource
    Online Resource
    Electrical Characteristics of Atmospheric-Pressure Plasma Enhanced Chemical Vapor Deposition Fabricated Indium-Gallium-Zinc-Oxide Thin-Film Transistors with In-Situ Hydrogenation and Neutral Beam Oxidation
    American Scientific Publishers ; 2022
    In:  Journal of Nanoelectronics and Optoelectronics Vol. 17, No. 12 ( 2022-12-01), p. 1548-1553
    Details
    In: Journal of Nanoelectronics and Optoelectronics, American Scientific Publishers, Vol. 17, No. 12 ( 2022-12-01), p. 1548-1553
    Abstract: Low temperature poly-crystalline silicon thin-film transistors (LTPS-TFTs) and indium-gallium-zinc-oxide TFTs (IGZO-TFTs) are potential candidates for future technology of various displays. Due to its simple manufacturing process, low cost and good uniformity, IGZO-TFTs have been developed as main stream display technology. From the viewpoint of device electrical characteristics, a-IGZO TFTs have better field-effect mobility ( 〉 10 cm 2 /V * s), larger I on / I off ratio ( 〉 10 6 ), smaller subthreshold swing (S.S) and good stability. In this study, atmospheric-pressure PECVD (AP-PECVD) is used to deposit a-IGZO active layer, during the deposition process In-Situ hydrogenation is applied to enhance the layer characteristics. Also, the layer is then surface oxidation treated by neutral beam system (NBS). The optimal TFTs device characteristics is reached with In-Situ hydrogenation of H 2 90 sccm, and surface oxidation of 400 W NBS treatment. The field-effect mobility is 34.05 cm 2 /V * s, threshold voltage is 1.74 V, subthreshold swing is 62 mV/decade, and current ratio I on / I off is 2.04×10 7 . Compared with conventional plasma, NBS used in this study provides charge-free plasma which could enhance device electric characteristics.
    Type of Medium: Online Resource
    ISSN: 1555-130X
    URL: Article
    DOI: 10.1166/jno.2022.3341
    Language: English
    Publisher: American Scientific Publishers
    Publication Date: 2022
    Location Call Number Limitation Availability
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    Online Resource
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