In:
Journal of Materials Chemistry C, Royal Society of Chemistry (RSC), Vol. 9, No. 35 ( 2021), p. 11662-11668
Abstract:
In this study, we achieved fully-printed flexible n-type tin oxide (SnO 2 ) thin-film transistors (TFTs) and logic inverters. The SnO 2 transistors exhibit outstanding performance with high saturation mobility of 13.3 cm 2 V −1 s −1 , small subthreshold swing (SS) of 130 mV dec −1 , large current on/off ratio ( I on / I off ) of 〉 10 5 , low turn-on voltage ( V on ) of −0.04 V, and enhancement-mode operations (threshold voltage, V th = 0.14 V). Moreover, the devices exhibited excellent electrical stability under positive bias stress (PBTS, Δ V th = 0.16 V) and negative bias stress (NBIS, Δ V th = −0.18 V) after 10 000 s voltage bias tests. The thickness-dependent bandgap widening together with TFT performance in SnO 2 thin films were also studied, illustrating that the nanometer-thin channel thickness played an important role in determining the switching performance of SnO 2 TFTs. Furthermore, the fully-printed SnO 2 TFTs exhibited robust mechanical flexibility with the minimum bending radius of 0.5 cm, promising for constructing advanced low-cost electronic devices and circuits.
Type of Medium:
Online Resource
ISSN:
2050-7526
,
2050-7534
Language:
English
Publisher:
Royal Society of Chemistry (RSC)
Publication Date:
2021
detail.hit.zdb_id:
2702245-6
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