In:
physica status solidi (a), Wiley, Vol. 207, No. 10 ( 2010-10), p. 2395-2398
Abstract:
A 197 Au ion source was used to irradiate a Ge 2 Sb 2 Te 5 ‐alloy‐based phase‐change memory (PCM) cell to study the ion‐irradiation effect on the properties of the cell. The PCM devices with the tungsten (W) heating electrode of 260 nm diameter were fabricated by 0.18 µm complementary metal‐oxide‐semiconductor (CMOS) technology. Four different doses (10 10 , 10 11 , 10 12 , and 5 × 10 12 ions/cm 2 , respectively) were applied to irradiate the PCM cell. The samples before and after irradiation were characterized by current–voltage and resistance measurements at room temperature. It is found that the cell properties (resistance value of the amorphous and crystalline states, threshold voltage, and current for phase transition, etc .) have hardly changed, even for the sample irradiated up to 10 12 ions/cm 2 dose, and the cell still has good set–reset operation ability (above 10 5 cycles). Furthermore, the resistance ratio remains at 1000 even after 10 5 cycles of the set–reset operation. The results show the PCM cell with Ge 2 Sb 2 Te 5 alloy has a strong ion‐irradiation tolerance.
Type of Medium:
Online Resource
ISSN:
1862-6300
,
1862-6319
DOI:
10.1002/pssa.v207:10
DOI:
10.1002/pssa.201026008
Language:
English
Publisher:
Wiley
Publication Date:
2010
detail.hit.zdb_id:
1481091-8
detail.hit.zdb_id:
208850-2
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