In:
Journal of Physics D: Applied Physics, IOP Publishing, Vol. 45, No. 48 ( 2012-12-05), p. 485103-
Abstract:
n-ZnO : Ga/p-GaN heterojunction light-emitting diodes with different interfacial layers are fabricated by pulsed laser deposition. All the devices demonstrate nonlinear rectifying behaviour. Due to the formation of Ga 2 O 3 interfacial layers, n-ZnO : Ga/p-GaN exhibits strong ultraviolet emission centred at 382 nm and blue emission centred at 423 nm. Compared with a n-ZnO : Ga/MgO/p-GaN light-emitting diode, the turn-on voltage of n-ZnO : Ga/p-GaN with a Ga 2 O 3 interfacial layer drops down to 7.6 V and the ultraviolet emission intensity is enhanced. Detailed electroluminescence mechanisms influenced by the interfacial layer are discussed using the band diagram of heterojunctions.
Type of Medium:
Online Resource
ISSN:
0022-3727
,
1361-6463
DOI:
10.1088/0022-3727/45/48/485103
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2012
detail.hit.zdb_id:
209221-9
detail.hit.zdb_id:
1472948-9
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