In:
physica status solidi c, Wiley, Vol. 11, No. 3-4 ( 2014-02), p. 466-468
Abstract:
For Al‐rich AlGaN which is applied to deep ultraviolet LEDs, improving doping efficiency without cracking problem is one of the most important research issues. Delta‐doping technique offers a promising approach. In this study, we report delta‐doping experiments in high aluminum content n‐Al x Ga 1‐x N (x=0.55) grown by MOCVD and investigate the effect of the growth technique. In the experiment we designed, a uniformly‐doped sample (reference sample) and three delta‐doping samples with varying delta‐doping time (6 s, 15 s, and 30 s) were fabricated on AlN templates. Measured by high‐resolution X‐ray diffraction (HR‐XRD) ω‐scan and atomic‐force microscope (AFM), samples with delta‐doping technique show better crystal quality. Moreover, tested by contactless sheet resistance and Hall‐effect test, delta‐doping samples exhibit better electrical property with lower sheet resistance, higher carrier mobility, and larger carrier density. When increasing delta‐doping time, all properties were gradually improved. These improvements were attributed to SiN x ‐growth‐mask and dislocation‐blocking effect induced by delta‐doping technique. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Type of Medium:
Online Resource
ISSN:
1862-6351
,
1610-1642
DOI:
10.1002/pssc.v11.3/4
DOI:
10.1002/pssc.201300412
Language:
English
Publisher:
Wiley
Publication Date:
2014
detail.hit.zdb_id:
2105580-4
detail.hit.zdb_id:
2102966-0
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