In:
Nanoscale, Royal Society of Chemistry (RSC), Vol. 15, No. 17 ( 2023), p. 7803-7811
Abstract:
Despite the impressive developments in perovskite optoelectronic devices, their long-term stability remains a major challenge. Chemical reactions and ion exchange at the metal/perovskite contact interface are two significant factors that lead to the failure of perovskite devices. To address this issue, a titanium nitride (TiN) layer is introduced as a robust corrosion-resistant coating between perovskite films and metal electrodes. By introducing TiN layer, a perovskite photodiode with dark current down to 3.25 × 10 −11 A cm −2 is realized. Consequently, the TiN-based perovskite photodiode shows a specific detectivity of 1.21 × 10 14 cm W −1 Hz 1/2 , which is approximately two orders of magnitude higher than that of the control device without a TiN layer. Under continuous illumination of a 520 nm green light for 576 000 cycles, the responsivity of the TiN-based photodetector remains at 94.27% of its initial value. The TiN-based photodetector exhibits superior stability under thermal stress. After aging at 85 °C for 572 h, the TiN-based photodetector retains 72% of its initial responsivity. Using the TiN-based photodiode, a perovskite image sensor containing 64 × 64 pixelated perovskite photodiodes is constructed over an amorphous silicon thin-film transistor (TFT) backplane. The perovskite image sensor exhibits real-time imaging capability and long-term stability for over 6 months. This study highlights the importance of using metallic nitrides to achieve high-performance and air-stable perovskite devices for optoelectronic applications.
Type of Medium:
Online Resource
ISSN:
2040-3364
,
2040-3372
Language:
English
Publisher:
Royal Society of Chemistry (RSC)
Publication Date:
2023
detail.hit.zdb_id:
2515664-0
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