In:
The Journal of Chemical Physics, AIP Publishing, Vol. 150, No. 9 ( 2019-03-07)
Abstract:
Since the origin of magnetism in ZnO-based diluted magnetic semiconductors (DMSs) is still controversial, in this work, we presented a detailed study on the magnetic, structural, and electronic properties of wurtzite ZnO-based DMS systems with point and complex intrinsic defects. Two outer electrons from neutral oxygen vacancy (VO) occupy the a1 orbital, making the inducted magnetic moment to be zero, while a cluster including three VOs leads to a magnetic moment of ∼1 μB. The magnetic moment of the system with a Zn vacancy (VZn) is 1.65 μB. When two neutral VZns in different relative distances were created in respective supercells, the systems showed different magnetic moments induced by the unequal level between the highest electron occupied orbital of the defect state introduced by different VZn sites and the valence band maximum. The system of a neutral O occupying an octahedral site gives rise to a magnetic moment of 2 μB, while zinc interstitial and antisite defects do not cause spin polarization. The system with a complex defect of VO and VZn is magnetic when those vacancies are adjacent but still do not cause the compensation effect. The oxygen interstitial defect is unstable, and VZn easily turns into the complex defect. We suggest that VO clusters and VZn complex defects could likely be the origin of ferromagnetism in undoped ZnO.
Type of Medium:
Online Resource
ISSN:
0021-9606
,
1089-7690
Language:
English
Publisher:
AIP Publishing
Publication Date:
2019
detail.hit.zdb_id:
3113-6
detail.hit.zdb_id:
1473050-9
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