GLORIA

GEOMAR Library Ocean Research Information Access

X

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • Springer Science and Business Media LLC  (2)
  • Leu, Ching-Chich  (2)
  • Chemistry/Pharmacy  (2)
Material
Publisher
  • Springer Science and Business Media LLC  (2)
Person/Organisation
Language
Years
Subjects(RVK)
  • Chemistry/Pharmacy  (2)
RVK
  • 1
    Online Resource
    Online Resource
    Effects of HfO 2 buffer layer thickness on the properties of Pt/SrBi 2 Ta 2 O 9 /HfO 2 /Si structure
    Springer Science and Business Media LLC ; 2008
    In:  Journal of Materials Research Vol. 23, No. 7 ( 2008-07), p. 2023-2032
    Details
    In: Journal of Materials Research, Springer Science and Business Media LLC, Vol. 23, No. 7 ( 2008-07), p. 2023-2032
    Abstract: We investigated structural and characteristic changes in thin HfO 2 films ( 〈 10 nm) by varying their thicknesses and also examined their influence on the properties of Pt/SrBi 2 Ta 2 O 9 /HfO 2 /Si metal/ferroelectric/insulator/semiconductor (MFIS) structures. HfO 2 films with different thicknesses were found to exhibit rather distinct characteristics and to profoundly affect the properties of the fabricated MFIS capacitor. We found that, when employing 3.2-nm-thick HfO 2 as the buffer layer, the MFIS capacitor showed good memory performance at low operation voltage. However, this study demonstrated that some of the HfO 2 limited its application in MFIS memory, even though it is the most promising alternative gate dielectric material.
    Type of Medium: Online Resource
    ISSN: 0884-2914 , 2044-5326
    URL: Article
    DOI: 10.1557/JMR.2008.0248
    RVK:
    VA 5350
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 2008
    detail.hit.zdb_id: 54876-5
    detail.hit.zdb_id: 2015297-8
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
  • 2
    Online Resource
    Online Resource
    Influence of Ta content on the physical properties of SrBi 2 Ta 2 O 9 ferroelectric thin films
    Springer Science and Business Media LLC ; 2006
    In:  Journal of Materials Research Vol. 21, No. 12 ( 2006-12), p. 3124-3133
    Details
    In: Journal of Materials Research, Springer Science and Business Media LLC, Vol. 21, No. 12 ( 2006-12), p. 3124-3133
    Abstract: We have investigated the effect that the Ta content has on the ferroelectric properties of strontium bismuth tantalate (SBT) thin films synthesized using metalorganic decomposition (MOD) and spin coating techniques. The physical properties of these SBT samples were strongly dependent upon the Ta ratio. Polarization measurements revealed that Ta-deficient SBT exhibited a relatively low coercive field (2 E c ∼ 87 kV/cm) and a high remanent polarization (2 P r ∼ 15 μC/cm 2 ). The value of 2P r decreased as the Ta ratio in SBT increased. The improved ferroelectric properties of the Ta-deficient SBT samples may have resulted from the uniformly well-grown bismuth-layered-structured (BLS) phases of the films and their highly preferential orientation along the a and b axes. We suggest that the incorporation of Ta vacancies plays an important role in enhancing the crystallinities and microstructures of Ta-deficient SBT films.
    Type of Medium: Online Resource
    ISSN: 0884-2914 , 2044-5326
    URL: Article
    DOI: 10.1557/jmr.2006.0383
    RVK:
    VA 5350
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 2006
    detail.hit.zdb_id: 54876-5
    detail.hit.zdb_id: 2015297-8
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
    Online Resource
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...