In:
Applied Physics Letters, AIP Publishing, Vol. 80, No. 17 ( 2002-04-29), p. 3078-3080
Kurzfassung:
Buried dislocation networks obtained by Si(001) wafer bonding pattern the free surface of the sample, giving rise to long-range undulations and short-range embossing, respectively, for flexion and rotation misalignement. Comparison with continuum-elasticity calculations reveals that this patterning is enhanced by strain-driven overetching. These surfaces are a template for growth, and we show that Ge quantum dots can be ordered with a fourfold symmetry by proceeding a postgrowth annealing.
Materialart:
Online-Ressource
ISSN:
0003-6951
,
1077-3118
Sprache:
Englisch
Verlag:
AIP Publishing
Publikationsdatum:
2002
ZDB Id:
211245-0
ZDB Id:
1469436-0
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