In:
Electronics, MDPI AG, Vol. 8, No. 9 ( 2019-08-28), p. 947-
Abstract:
We investigate the annealing environment effect on ZrO2-based resistive random-access memory (RRAM) devices. Fabricated devices exhibited conventional bipolar-switching memory properties. In particular, the vacuum-annealed ZrO2 films exhibited larger crystallinity and grain size, denser film, and a relatively small quantity of oxygen vacancies compared with the films annealed in air and N2. These led to a decrease in the leakage current and an increase in the resistance ratio of the high-resistance state (HRS)/low-resistance state (LRS) and successfully improved non-volatile memory properties, such as endurance and retention characteristics. The HRS and LRS values were found to last for 104 s without any significant degradation.
Type of Medium:
Online Resource
ISSN:
2079-9292
DOI:
10.3390/electronics8090947
Language:
English
Publisher:
MDPI AG
Publication Date:
2019
detail.hit.zdb_id:
2662127-7
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