In:
Applied Physics Letters, AIP Publishing, Vol. 93, No. 18 ( 2008-11-03)
Abstract:
In order to model dc characteristics of n-channel amorphous InGaZnO thin-film transistors from experimentally obtained density of states (DOS), the acceptorlike DOS is extracted from the optical response of capacitance-voltage characteristics and confirmed by the technology computer-aided design (TCAD) simulation comparing with the measured data. Extracted DOS is a linear superposition of two exponential functions (tail and deep states), and its incorporation into TCAD model reproduces well the experimental current-voltage characteristics over the wide range of the gate and drain voltages. The discrepancy at higher gate voltage is expected to be improved by incorporating a gate voltage-dependent mobility in the model.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2008
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
Permalink