In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 937 ( 2006)
Abstract:
A top gate pentacene TFT employing vapor deposited polyimide as a gate dielectric was fabricated. Polyimide was co-evaporated from 6FDA and ODA monomers and annealed at 150 °C in vacuum. The degree of imidization was verified by FT-IR. A breakdown voltage of 0.9 MV/cm of polyimide film was measured by MIM structure. A top gate pentacene TFT with W/L=25 has 0.01 cm 2 /Vs as a mobility, about 10 3 as an on-off ratio (I n/off ), −7.5V as a threshold voltage and 9 V per decade as a sub-threshold slope.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-0937-M10-51
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2006
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