In:
Journal of Materials Chemistry A, Royal Society of Chemistry (RSC), Vol. 10, No. 9 ( 2022), p. 4711-4719
Abstract:
Morphological engineering of two-dimensional chalcogenides has led to significant advances in terms of high responses and low power consumption for chemiresistive gas sensors. Nevertheless, the practical use of such nanostructured two-dimensional materials is still limited. The difficulties in patterning resulting from the morphological complexity of nanostructures and the absence of highly sensitive p-type semiconductor sensors are major obstacles. In this study, we report a highly sensitive NO 2 gas sensor composed of cross-linked p-type SnS nanoplates on SiO 2 nanorods. The area-selective growth of SnS by atomic layer deposition allows for the self-aligned formation of SnS nanoplates only on SiO 2 nanorods without an additional patterning process. The cross-linked structure of the SnS nanoplates enabled the electrical connection of small and very thin SnS nanoplates, which increased the resistance difference between the hole accumulation layer across the entire surface and the less conductive core. Consequently, this cross-linked structure enhances the gas response of p-type semiconductor sensors. The gas response did not vary significantly when the relative humidity (RH) changed from 40% to 80%. Under ambient conditions of 60% RH at room temperature, the SnS sensor exhibited a high response of 116% to 5 ppm NO 2 , along with an extremely low detection limit of 21 ppt. The sensor showed excellent selectivity for NO 2 , with a minimal response to other gases. This approach provides possibilities for employing p-type semiconductors in practical room-temperature sensor applications.
Type of Medium:
Online Resource
ISSN:
2050-7488
,
2050-7496
Language:
English
Publisher:
Royal Society of Chemistry (RSC)
Publication Date:
2022
detail.hit.zdb_id:
2702232-8
detail.hit.zdb_id:
2696984-1
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